P. Holliger

发表

Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

Laurent Vivien, Suzanne Laval, G. Rolland, 2004 .

SiGe channel p-MOSFETs scaling-down

G. Ghibaudo, F. Andrieu, T. Ernst, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Tensile-strained Si layers grown on Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates: I. Film thickness and morphology

J. Hartmann, G. Rolland, T. Billon, 2007 .

High-temperature growth of very high germanium content SiGe virtual substrates

J. Hartmann, Y. Bogumilowicz, A. Papon, 2006 .

Induction of Human T Lymphocyte Cytotoxicity and Inhibition of Tumor Growth by Tumor-Specific Diabody-Based Molecules Secreted from Gene-Modified Bystander Cells1

R. Vile, L. Álvarez-Vallina, B. Blanco, 2003, The Journal of Immunology.

CellsSecreted from Gene-Modified Bystander by Tumor-Specific Diabody-Based Molecules Growth Cytotoxicity and Inhibition of Tumor Induction of Human T Lymphocyte

R. Vile, L. Álvarez-Vallina, B. Blanco, 2003 .

Wet cleaning and surface characterization of Si1−xGex virtual substrates after a CMP step

Y. Campidelli, J. Hartmann, P. Besson, 2008 .

Reduced Pressure - Chemical Vapor Deposition of Ge thick layers on Si(001) for microelectronics and optoelectronics purposes

Jean-Michel Hartmann, Laurent Vivien, Suzanne Laval, 2004 .

Growth temperature dependence of substitutional carbon incorporation in SiGeC/Si heterostructures

J. Hartmann, V. Loup, G. Rolland, 2003 .

Reduced pressure chemical vapor deposition of Si1−x−yGexCy/Si and Si1−yCy/Si heterostructures

J. Hartmann, V. Loup, G. Rolland, 2002 .

Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates

J. Hartmann, M. Vinet, D. Lafond, 2003 .

Reduced pressure chemical vapour deposition of Si/Si1−x−yGexCy heterostructures using a chlorinated chemistry

D. Lafond, Pascal Besson, G. Rolland, 2003 .

Metal-Insulator-Metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition

Catherine Dubourdieu, Serge Blonkowski, Olivier Joubert, 2004 .

SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition

J. Hartmann, V. Loup, G. Rolland, 2002 .

Reduced pressure-chemical vapor deposition of high ge content Si1-xGex and high C content Si1-yCy layers for advanced metal oxide semiconductor transistors

J. Hartmann, F. Andrieu, Y. Bogumilowicz, 2005 .

High C content Si/Si1−yCy heterostructures for n-type metal oxide semiconductor transistors

R. Truche, S. Deleonibus, T. Ernst, 2004 .

Ultra-low energy SIMS analysis of boron deltas in silicon

J. Hartmann, A. Papon, F. Laugier, 2002 .

Surface roughening and erosion rate change at low energy SIMS depth profiling of silicon during oblique O2+ bombardment

B. Fares, B. Gautier, J. Dupuy, 2006 .

Deconvolution of very low primary energy SIMS depth profiles

B. Fares, B. Gautier, J. Dupuy, 2006 .

Backside and frontside depth profiling of B delta doping, at low energy, using new and previous magnetic SIMS instruments

R. Truche, H. Moriceau, F. Laugier, 2004 .

Quantification of SiGe layer composition using MCs+ and MCs2+ secondary ions in ToF-SIMS and magnetic SIMS

J. Hartmann, J. Barnes, F. Fillot, 2008 .

Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains

J. Hartmann, L. Clavelier, G. Rolland, 2004 .

Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices

Y. Bogumilowicz, Jean-Michel Hartmann, R. Truche, 2004 .

Reduced pressure chemical vapor deposition of Si/Si1-yCy heterostructures for n-type metal-oxide-semiconductor transistors

J. Hartmann, S. Deleonibus, T. Ernst, 2002 .

Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(0 0 1) for microelectronics and optoelectronics purposes

Y. Bogumilowicz, G. Rolland, J. Hartmann, 2005 .

SIMS depth profiling of ultrashallow P, Ge and As implants in Si using MCs2+ ions

F. Laugier, P. Holliger, J. Dupuy, 2002 .

Electrical properties of metal-oxide-semiconductor structures with low-energy Ge-implanted and annealed thin gate oxides

P. Normand, E. Kapetanakis, P. Holliger, 2008 .

Growth of SiGe/Si superlattices on silicon-on-insulator substrates for multi-bridge channel field effect transistors

Thomas Ernst, Nathalie Vulliet, G. Rolland, 2005 .

Low thermal budget surface preparation of Si and SiGe

J. Hartmann, P. Besson, P. Gentile, 2004 .

High temperature growth of very high Ge content SiGe virtual substrates

J. Hartmann, Y. Bogumilowicz, A. Papon, 2006, 2006 International SiGe Technology and Device Meeting.

Double SiGe:C diffusion barrier channel 40nm CMOS with improved short-channel performances

A. Toffoli, J. Cluzel, J. Hartmann, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

A new Si:C epitaxial channel nMOSFET architecture with improved drivability and short-channel characteristics

T. Ernst, J.-M. Hartmann, S. Deleonibus, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).