M. Yee

A rigorous surface-potential-based I-V model for undoped cylindrical nanowire MOSFETs

G. H. See, Z.M. Zhu, C.Q. Wei, 2007, 2007 7th IEEE Conference on Nanotechnology (IEEE NANO).

Temperature dependence of breakdown and avalanche multiplication in In/sub 0.53/Ga/sub 0.47/As diodes and heterojunction bipolar transistors

A. Krysa, J. David, C. Tan, 2003 .

Electronic and transport properties of graphene nanoribbons

Zhufeng Hou, Z. Hou, M. Yee, 2007, 2007 7th IEEE Conference on Nanotechnology (IEEE NANO).

Measurement of electron saturation velocity in Ga0.52In0.48P in a double heterojunction bipolar transistor

J. David, P. Houston, M. Yee, 2002 .

Temperature dependent low-field electron multiplication in In0.53Ga0.47As

J. David, C. Tan, J. Ng, 2003 .

Negative temperature dependence of electron multiplication in In0.53Ga0.47As

J. David, P. Houston, C. Harrison, 2003 .

Temperature dependence of In/sub 0.53/Ga/sub 0.47/As ionisation coefficients

J. David, P. Houston, M. Yee, 2002, The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications.

Atomistic modeling of the electrostatic and transport properties of a simplified nanoscale field effect transistor

Xing Zhou, Z. Yao, M. Yee, 2008, 0812.0095.