P. Marsh

180 GHz InAlAs/InGaAs HEMT monolithic integrated frequency doubler

Youngwoo Kwon, M. Tutt, D. Pavlidis, 1991, [1991] GaAs IC Symposium Technical Digest.

InGaAs-Schottky contacts made by in situ plated and evaporated Pt-an analysis based on DC and noise characteristics

D. Pavlidis, K. Hong, D. Pavlidis, 1998 .

Experimental characteristics and performance analysis of monolithic InP-based HEMT mixers at W-band

Youngwoo Kwon, T. L. Brock, D. Pavlidis, 1993 .

A fully integrated monolithic D-band oscillator-doubler chain using InP-based HEMTs

G. I. Haddad, Youngwoo Kwon, D. Pavlidis, 1992, GaAs IC Symposium Technical Digest 1992.

Low-frequency noise characteristics of lattice-matched (x=0.53) and strained (x>0.53) In/sub 0.52/Al/sub 0.48/As/InxGa/sub 1-/xAs HEMT's

M. Tutt, D. Pavlidis, G. I. Ng, 1992 .

MOVPE-grown millimeter-wave InGaAs mixer diode technology and characteristics

D. Pavlidis, K. Hong, D. Pavlidis, 1997 .

InAlAs/InGaAs varactor diodes with THz cutoff frequencies fabricated by planar integrated technology

D. Pavlidis, G. I. Ng, K. Hong, 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

A 100-GHz monolithic cascode InAlAs/InGaAs HEMT oscillator

Youngwoo Kwon, D. Pavlidis, T. Brock, 1994, IEEE Microwave and Guided Wave Letters.

A miniaturized W-band monolithic dual-gate InAlAs/InGaAs HEMT mixer

D. C. Streit, Youngwoo Kwon, D. Pavlidis, 1993, 15th Annual GaAs IC Symposium.