Chun-Yang Huang

Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture

Umesh Chand, Tseung-Yuen Tseng, Dayanand Kumar, 2015 .

Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure

Umesh Chand, Tseung-Yuen Tseng, Chen-Hsi Lin, 2015 .

Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory

Umesh Chand, Tseung-Yuen Tseng, Wen-Yueh Jang, 2015 .

Mechanism of High Temperature Retention Property (up to 200 °C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer

Umesh Chand, Tseung-Yuen Tseng, Chun-Yang Huang, 2014, IEEE Electron Device Letters.

Improvement of Unipolar Resistive Switching Characteristics in Ti Embedded ZrO2 Thin Film

Umesh Chand, Tseung-Yuen Tseng, T. Tseng, 2014 .

Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

Umesh Chand, Tseung-Yuen Tseng, T. Tseng, 2015, IEEE Transactions on Electron Devices.