Shao-yan Yang

发表

Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures

Hongyuan Wei, Qinsheng Zhu, Yuxia Feng, 2014 .

Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors

Lianshan Wang, Shao-yan Yang, Zhanguo Wang, 2019, Semiconductor Science and Technology.

Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution

Hongyuan Wei, Zhan-guo Wang, A. Yang, 2009 .

Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD

Xiaoqing Xu, Qinsheng Zhu, Shao-yan Yang, 2011, Nanotechnology.

The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system

Xiaoqing Xu, Hongyuan Wei, A. Yang, 2010 .

Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2018 .

Hydride vapor phase epitaxy for gallium nitride substrate

Hongyuan Wei, Zhan-guo Wang, Lianshan Wang, 2019, Journal of Semiconductors.

Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters

Xiaoqing Xu, Qinsheng Zhu, Yanwu Lu, 2010 .

Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy

Hongyuan Wei, Lianshan Wang, Yuxia Feng, 2014 .

Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2018 .

Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2016, Scientific Reports.

Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates

Hongyuan Wei, Zhan-guo Wang, Qinsheng Zhu, 2014 .

Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well

Tao Yang, Qinsheng Zhu, Liuwan Zhang, 2013 .

Impact of Cone‐Shape‐Patterned Sapphire Substrate and Temperature on the Epitaxial Growth of p‐GaN via MOCVD

Lianshan Wang, Shao-yan Yang, Zhanguo Wang, 2019, physica status solidi (a).

Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors

Hongyuan Wei, Qinsheng Zhu, Lianshan Wang, 2013 .

Investigation of coherency stress-induced phase separation in AlN/AlxGa1−xN superlattices grown on sapphire substrates

Hongyuan Wei, Lianshan Wang, Shao-yan Yang, 2020 .

Determination of the valence band offset of wurtzite InN /ZnO heterojunction by x-ray photoelectron spectroscopy

Hongyuan Wei, Qinsheng Zhu, Riqing Zhang, 2007 .

Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2017 .

Growth of c-oriented ZnO films on (001) SMO3 substrates by MOCVD

C. Jia, Zhan-guo Wang, Shao-yan Yang, 2008 .

Competitive growth mechanisms of AlN on Si (111) by MOVPE

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2014, Scientific Reports.

Comparison of alloy disorder scatterings in Ga- and N-polar AlGaN/GaN heterostructures

Ming Zhu, Shao-yan Yang, Huijie Li, 2018 .

Theoretical study of the anisotropic electron scattering by steps in vicinal AlGaN/GaN heterostructures

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2015 .

MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers

Xiaoqing Xu, C. Jia, Zhan-guo Wang, 2011 .

Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures

Ju Wu, Qinsheng Zhu, Yanwu Lu, 2011 .

Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy

Xiaoqing Xu, Hongyuan Wei, Qinsheng Zhu, 2010 .

Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2017 .

Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy

Hongyuan Wei, A. Yang, Qinsheng Zhu, 2010 .

GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique

N. Chen, Jian-Ping Zhou, Shao-yan Yang, 2002 .

Dislocation Scattering in ZnMgO/ZnO Heterostructures

Hongyuan Wei, Qinsheng Zhu, Guijuan Zhao, 2013, IEEE Transactions on Electron Devices.

Dislocation core effect scattering in a quasitriangle potential well

Xiaoqing Xu, Hongyuan Wei, Qinsheng Zhu, 2009 .

Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

Qinsheng Zhu, Shao-yan Yang, X. Liu, 2011, Nanoscale research letters.

Determination of polar C‐plane and nonpolar A‐plane AlN/GaN heterojunction band offsets by X‐ray photoelectron spectroscopy

Y. Hao, Qinsheng Zhu, Wei Mao, 2014 .

The Growth of Semi-Polar ZnO (101̄1) on Si (111) Substrates Using a Methanol Oxidant by Metalorganic Chemical Vapor Deposition

Hongyuan Wei, Qinsheng Zhu, Shao-yan Yang, 2012 .

Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition

Hongyuan Wei, C. Jia, A. Yang, 2010 .

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

N. Chen, Jian-Ping Zhou, Shao-yan Yang, 2004 .

Photoluminescence behaviors from stoichiometric gadolinium oxide films

N. Chen, Jian-Ping Zhou, Shao-yan Yang, 2003 .

Control of epitaxial relationships of ZnO/SrTiO3 heterointerfaces by etching the substrate surface

Weifeng Zhang, C. Jia, Shao-yan Yang, 2013, Nanoscale Research Letters.

Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method

Xiaoqing Xu, Hongyuan Wei, Tieying Yang, 2011, Nanoscale research letters.

Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2015 .

Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer

Hongyuan Wei, Z. Wang, Qinsheng Zhu, 2014 .

Anomalous temperature dependence of photoluminescence from a-C:H film deposited by energetic hydrocarbon ion beam

M. Liao, Shao-yan Yang, Zhanguo Wang, 2002 .

Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth

Xiaoqing Xu, Hongyuan Wei, Qinsheng Zhu, 2012 .

Analysis of growth rate and crystal quality of AlN epilayers by flow-modulated metal organic chemical vapor deposition

Lianshan Wang, Shao-yan Yang, Zhanguo Wang, 2020 .

Mobility limited by cluster scattering in ternary alloy quantum wires

Qinsheng Zhu, Guipeng Liu, Shao-yan Yang, 2014 .

Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells

Qinsheng Zhu, Guijuan Zhao, Guipeng Liu, 2013 .

Strain Distributions in Non-Polar a-Plane InxGa1−xN Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction

Hongyuan Wei, Z. Wang, Qinsheng Zhu, 2013 .

Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures

Hongyuan Wei, Qinsheng Zhu, Liuwan Zhang, 2014 .

Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures

Y. Hao, Ju Wu, Qinsheng Zhu, 2012 .

Surface morphology of ion-beam deposited carbon films under high temperature

M. Liao, Shao-yan Yang, Zhanguo Wang, 2002 .

Ion bombardment as the initial stage of diamond film growth

Shui-Tong Lee, M. Liao, Shao-yan Yang, 2001 .

Violet/blue emission from hydrogenated amorphous carbon films deposited from energetic CH3+ ions and ion bombardment

M. Liao, Zhihong Feng, Shao-yan Yang, 2002 .

Raman Spectra of Semi-polar (11-22) InGaN Thick Films

Wenhong Sun, Lianshan Wang, Shao-yan Yang, 2022, Vibrational Spectroscopy.

Anisotropic Strain Relaxation in Semipolar (112¯2) InGaN/GaN Superlattice Relaxed Templates

Lianshan Wang, Shao-yan Yang, Huan-hua Wang, 2022, Nanomaterials.

Violet/blue photoluminescence from CeO2 thin film

N. Chen, M. Liao, Shao-yan Yang, 2003 .

Electron Mobility due to Surface Roughness Scattering in Depleted GaAs Free-Standing Thin Ribbon

Shao-yan Yang, C. Li, X. Hu, 2019, Materials Science Forum.

Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned ternary III-nitride nanotube arrays.

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2015, Nanoscale.

Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer

Hongyuan Wei, Guijuan Zhao, Shao-yan Yang, 2014 .

MnSi ̃1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique

N. Chen, M. Liao, Shao-yan Yang, 2001 .

Fabrication of GdSi2 film by low-energy ion-beam implantation

N. Chen, Shao-yan Yang, Yan-Li Li, 2004 .

Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition

Xiaoqing Xu, Hongyuan Wei, Qinsheng Zhu, 2012 .

Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2016, Nanoscale Research Letters.

Red Emission of InGaN/GaN Multiple‐Quantum‐Well Light‐Emitting Diode Structures with Indium‐Rich Clusters

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2018, physica status solidi (a).

Plasmon mode coupling and depolarization shifts in AlGaAs/GaAs asymmetric step quantum wells with and without electric field

Shao-yan Yang, X. Liu, Zhanguo Wang, 2015 .

Electron scattering in GaAs/InGaAs quantum wells subjected to an in-plane magnetic field

Tao Yang, Qinsheng Zhu, Liuwan Zhang, 2013 .

Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well

Shu-Shen Li, Qinsheng Zhu, Shao-yan Yang, 2009, Nanoscale research letters.

Plasmons in a free-standing nanorod with a two-dimensional parabolic quantum well caused by surface states

Z. Wang, Qinsheng Zhu, Yanwu Lu, 2012 .

Carbonization process of Si(1 0 0) by ion-beam bombardment

M. Liao, Zhan-guo Wang, Z. Yao, 2001 .

Growth and Characterization of an a-Plane InxGa1−xN on a r-Plane Sapphire

Hongyuan Wei, Qinsheng Zhu, Guijuan Zhao, 2012 .

Band alignment of InN∕GaAs heterojunction determined by x-ray photoelectron spectroscopy

Hongyuan Wei, Qinsheng Zhu, Riqing Zhang, 2008 .

Calculation of discrepancies in measured valence band offsets of heterojunctions with different crystal polarities

Y. Hao, Qinsheng Zhu, Wei Mao, 2012 .

Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes

Lianshan Wang, Shao-yan Yang, X. Liu, 2021 .

GaN grown with InGaN as a weakly bonded layer

Xiaoqing Xu, Hongyuan Wei, Qinsheng Zhu, 2011 .

X-ray probe of GaN thin films grown on InGaN compliant substrates

Xiaoqing Xu, Hongyuan Wei, Shao-yan Yang, 2013 .

Anisotropically biaxial strain in non-polar (112–0) plane InxGa1−xN/GaN layers investigated by X-ray reciprocal space mapping

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2017, Scientific Reports.

The immiscibility of InAlN ternary alloy

Xiaoqing Xu, Hongyuan Wei, Lianshan Wang, 2016, Scientific Reports.

Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods

Xiaoqing Xu, Qinsheng Zhu, Shao-yan Yang, 2010 .

Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

Weifeng Zhang, C. Jia, Shao-yan Yang, 2011, Nanoscale research letters.

Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells

Ju Wu, Qinsheng Zhu, Guijuan Zhao, 2012 .

Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy

Hongyuan Wei, A. Yang, Qinsheng Zhu, 2011 .

Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

Qinsheng Zhu, Shao-yan Yang, X. Liu, 2011, Nanoscale research letters.

Numerical study of radial temperature distribution in the AlN sublimation growth system

Hongyuan Wei, Yuxia Feng, Shao-yan Yang, 2013 .

Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE*

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2016 .

Growth and characterization of amber light-emitting diodes with dual-wavelength InGaN/GaN multiple-quantum-well structures

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2019, Materials Research Express.

Strain relaxation of InP film directly grown on GaAs patterned compliant substrate

Dabing Li, Zhan-guo Wang, Shao-yan Yang, 2002 .

Wet etching of semi-polar (11–22) GaN on m-sapphire by different methods

Lianshan Wang, Shao-yan Yang, Wenlong Li, 2021 .

The influence of high-temperature nitridation process on the crystalline quality of semipolar (112¯

Wenhong Sun, Lianshan Wang, Shao-yan Yang, 2022, Current Applied Physics.

Scattering due to large cluster embedded in quantum wells

Qinsheng Zhu, Guijuan Zhao, Guipeng Liu, 2013 .

A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition

Hongyuan Wei, Wang Zhanguo, Zhang Pan-feng, 2008 .

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2016, Nanomaterials.

Gal(1-x)Mn(1-x)Sb Grown on GaSb with Mass-Analyzed Low-Energy Dual Ion Beam Deposition

N. Chen, Lifeng Liu, Jinliang Wu, 2005 .

(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition

N. Chen, Shao-yan Yang, X. Liu, 2003 .

The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

N. Chen, Shao-yan Yang, X. Liu, 2004 .

Mn implanted GaAs by low energy ion beam deposition

Z. Yin, N. Chen, Shao-yan Yang, 2004 .

Room-temperature ferromagnetic semiconductor MnxGa1−xSb

Shao-yan Yang, Zhi-kai Liu, Chunlin Chai, 2003 .

Investigation of Oxygen Vacancy and Interstitial Oxygen Defects in ZnO Films by Photoluminescence and X-Ray Photoelectron Spectroscopy

Hongyuan Wei, Wang Zhanguo, Zhang Pan-feng, 2007 .

(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit

N. Chen, Shao-yan Yang, Yan-Li Li, 2004 .