Zhanguo Wang

发表

Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures

Hongyuan Wei, Qinsheng Zhu, Yuxia Feng, 2014 .

Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors

Lianshan Wang, Shao-yan Yang, Zhanguo Wang, 2019, Semiconductor Science and Technology.

The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system

Xiaoqing Xu, Hongyuan Wei, A. Yang, 2010 .

Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2018 .

Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters

Xiaoqing Xu, Qinsheng Zhu, Yanwu Lu, 2010 .

Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy

Hongyuan Wei, Lianshan Wang, Yuxia Feng, 2014 .

Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2018 .

Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2016, Scientific Reports.

Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well

Tao Yang, Qinsheng Zhu, Liuwan Zhang, 2013 .

Impact of Cone‐Shape‐Patterned Sapphire Substrate and Temperature on the Epitaxial Growth of p‐GaN via MOCVD

Lianshan Wang, Shao-yan Yang, Zhanguo Wang, 2019, physica status solidi (a).

Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors

Hongyuan Wei, Qinsheng Zhu, Lianshan Wang, 2013 .

Investigation of coherency stress-induced phase separation in AlN/AlxGa1−xN superlattices grown on sapphire substrates

Hongyuan Wei, Lianshan Wang, Shao-yan Yang, 2020 .

Determination of the valence band offset of wurtzite InN /ZnO heterojunction by x-ray photoelectron spectroscopy

Hongyuan Wei, Qinsheng Zhu, Riqing Zhang, 2007 .

Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2017 .

Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

D. Ji, Qinsheng Zhu, Yanwu Lu, 2013 .

Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors

D. Ji, Qinsheng Zhu, Yanwu Lu, 2012 .

Theoretical study of the anisotropic electron scattering by steps in vicinal AlGaN/GaN heterostructures

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2015 .

Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction

Qinsheng Zhu, Yan Huang, Yanwu Lu, 2012 .

Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors

D. Ji, Qinsheng Zhu, Yanwu Lu, 2012 .

Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures

Ju Wu, Qinsheng Zhu, Yanwu Lu, 2011 .

Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy

Xiaoqing Xu, Hongyuan Wei, Qinsheng Zhu, 2010 .

Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2017 .

Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy

Hongyuan Wei, A. Yang, Qinsheng Zhu, 2010 .

Dislocation Scattering in ZnMgO/ZnO Heterostructures

Hongyuan Wei, Qinsheng Zhu, Guijuan Zhao, 2013, IEEE Transactions on Electron Devices.

Dislocation core effect scattering in a quasitriangle potential well

Xiaoqing Xu, Hongyuan Wei, Qinsheng Zhu, 2009 .

Determination of polar C‐plane and nonpolar A‐plane AlN/GaN heterojunction band offsets by X‐ray photoelectron spectroscopy

Y. Hao, Qinsheng Zhu, Wei Mao, 2014 .

The Growth of Semi-Polar ZnO (101̄1) on Si (111) Substrates Using a Methanol Oxidant by Metalorganic Chemical Vapor Deposition

Hongyuan Wei, Qinsheng Zhu, Shao-yan Yang, 2012 .

Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition

Hongyuan Wei, C. Jia, A. Yang, 2010 .

Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2015 .

Anomalous temperature dependence of photoluminescence from a-C:H film deposited by energetic hydrocarbon ion beam

M. Liao, Shao-yan Yang, Zhanguo Wang, 2002 .

Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth

Xiaoqing Xu, Hongyuan Wei, Qinsheng Zhu, 2012 .

Analysis of growth rate and crystal quality of AlN epilayers by flow-modulated metal organic chemical vapor deposition

Lianshan Wang, Shao-yan Yang, Zhanguo Wang, 2020 .

Mobility limited by cluster scattering in ternary alloy quantum wires

Qinsheng Zhu, Guipeng Liu, Shao-yan Yang, 2014 .

Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells

Qinsheng Zhu, Guijuan Zhao, Guipeng Liu, 2013 .

Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures

Hongyuan Wei, Qinsheng Zhu, Liuwan Zhang, 2014 .

Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures

Y. Hao, Ju Wu, Qinsheng Zhu, 2012 .

Surface morphology of ion-beam deposited carbon films under high temperature

M. Liao, Shao-yan Yang, Zhanguo Wang, 2002 .

Ion bombardment as the initial stage of diamond film growth

Shui-Tong Lee, M. Liao, Shao-yan Yang, 2001 .

Violet/blue emission from hydrogenated amorphous carbon films deposited from energetic CH3+ ions and ion bombardment

M. Liao, Zhihong Feng, Shao-yan Yang, 2002 .

Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition

Xiaoqing Xu, Hongyuan Wei, Qinsheng Zhu, 2012 .

Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer

Lianshan Wang, Zhanguo Wang, Xianglin Liu, 1998 .

Red Emission of InGaN/GaN Multiple‐Quantum‐Well Light‐Emitting Diode Structures with Indium‐Rich Clusters

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2018, physica status solidi (a).

Intersubband optical absorption in quantum dots-in-a-well heterostructures

Qinsheng Zhu, Jiejun Wu, X. F. Han, 2005 .

Plasmon mode coupling and depolarization shifts in AlGaAs/GaAs asymmetric step quantum wells with and without electric field

Shao-yan Yang, X. Liu, Zhanguo Wang, 2015 .

Electron scattering in GaAs/InGaAs quantum wells subjected to an in-plane magnetic field

Tao Yang, Qinsheng Zhu, Liuwan Zhang, 2013 .

Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well

Shu-Shen Li, Qinsheng Zhu, Shao-yan Yang, 2009, Nanoscale research letters.

Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well

J. Li, Dabing Li, X. Han, 2004 .

Growth and Characterization of an a-Plane InxGa1−xN on a r-Plane Sapphire

Hongyuan Wei, Qinsheng Zhu, Guijuan Zhao, 2012 .

Band alignment of InN∕GaAs heterojunction determined by x-ray photoelectron spectroscopy

Hongyuan Wei, Qinsheng Zhu, Riqing Zhang, 2008 .

Calculation of discrepancies in measured valence band offsets of heterojunctions with different crystal polarities

Y. Hao, Qinsheng Zhu, Wei Mao, 2012 .

Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes

Lianshan Wang, Shao-yan Yang, X. Liu, 2021 .

GaN grown with InGaN as a weakly bonded layer

Xiaoqing Xu, Hongyuan Wei, Qinsheng Zhu, 2011 .

X-ray probe of GaN thin films grown on InGaN compliant substrates

Xiaoqing Xu, Hongyuan Wei, Shao-yan Yang, 2013 .

Anisotropically biaxial strain in non-polar (112–0) plane InxGa1−xN/GaN layers investigated by X-ray reciprocal space mapping

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2017, Scientific Reports.

Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods

Xiaoqing Xu, Qinsheng Zhu, Shao-yan Yang, 2010 .

Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells

Ju Wu, Qinsheng Zhu, Guijuan Zhao, 2012 .

Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy

Hongyuan Wei, A. Yang, Qinsheng Zhu, 2011 .

Growth and characterization of amber light-emitting diodes with dual-wavelength InGaN/GaN multiple-quantum-well structures

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2019, Materials Research Express.

Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates

Lianshan Wang, Zhanguo Wang, Xianglin Liu, 1998 .

Scattering due to large cluster embedded in quantum wells

Qinsheng Zhu, Guijuan Zhao, Guipeng Liu, 2013 .

A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition

Hongyuan Wei, Wang Zhanguo, Zhang Pan-feng, 2008 .

Investigation of Oxygen Vacancy and Interstitial Oxygen Defects in ZnO Films by Photoluminescence and X-Ray Photoelectron Spectroscopy

Hongyuan Wei, Wang Zhanguo, Zhang Pan-feng, 2007 .