N. Zhang

发表

High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers

Z. Qin, X. Kang, X. L. Yang, 2019, Applied Physics Letters.

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Z. Qin, W. Ge, Fujun Xu, 2021 .

The sapphire substrate pretreatment effects on high-temperature annealed AlN templates in deep ultraviolet light emitting diodes

Z. Qin, X. Kang, X. L. Yang, 2019, CrystEngComm.

Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

Z. Qin, W. Ge, X. Kang, 2021, IEEE Photonics Journal.

Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment

Z. Qin, X. Kang, X. L. Yang, 2021 .

Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer.

Xiaodong Wang, Z. Qin, W. Ge, 2019, Optics express.

Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission

Z. Qin, X. Kang, X. L. Yang, 2020 .

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Z. Qin, W. Ge, X. Kang, 2022, Light, science & applications.