W. Tian

发表

Numerical study of the advantages of ultraviolet light-emitting diodes with a single step quantum well as the electron blocking layer

C. Chen, Z. Feng, S. Cai, 2013 .

Efficiency Improvement Using Thickness-Chirped Barriers in Blue InGaN Multiple Quantum Wells Light Emitting Diodes

Feng Wu, J. Dai, Changqin Chen, 2013, IEEE Photonics Journal.

The Advantages of AlGaN-Based UV-LEDs Inserted With a p-AlGaN Layer Between the EBL and Active Region

Wu Tian, Jun Zhang, Feng Wu, 2013, IEEE Photonics Journal.

Improvement of blue InGaN light-emitting diodes with gradually increased barrier heights from n- to p-layers

J. Dai, Changqin Chen, Yanyan Fang, 2013 .

Double-resonance enhanced intersubband second-order nonlinear optical susceptibilities in GaN/AlGaN step quantum wells.

C. Chen, S. Wang, J. Dai, 2014, Optics express.

Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers

Yang Li, Wu Tian, Zhihao Wu, 2013, IEEE Photonics Journal.

Defect reduction in Si-doped Al0.45Ga0.55N films by SiNx interlayer method

J. Dai, Changqin Chen, W. Tian, 2014 .

Effects of Al0.3Ga0.7As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of GaAs/Ge grown by MOCVD

Chaoji Chen, Feng Wu, J. Dai, 2014 .

Infrared intersubband absorption in nonpolar a-plane AlGaN/GaN multiple quantum wells

Feng Wu, J. Dai, Changqin Chen, 2015 .

3D Hierarchical Bi2S3 Nanostructures by Polyvinylpyrrolidone (PVP) and Chloride Ion-Assisted Synthesis and Their Photodetecting Properties

K. Huo, Juan Xu, J. Dai, 2015, Nanoscale Research Letters.

Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

J. Dai, Changqin Chen, H. Xiong, 2014, Nanoscale Research Letters.

Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition

Chaoji Chen, Yujiao Fang, Mingkai Li, 2013 .

Temperature dependent photoluminescence study of exciton localization in Al0.2Ga0.8N epitaxial layer

Z. Feng, Feng Wu, J. Dai, 2015 .

Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD

S. L. Li, C. Chen, Y. Tian, 2013 .

Growth and properties of ZnO film grown on AlN buffer layer by PLD

C. Chen, J. Dai, H. Xiong, 2012 .

Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition

S. L. Li, C. Chen, C. -. Yu, 2012 .

Effects of polarization on intersubband transitions of AlxGa1−xN/GaN multi-quantum wells

Chenhui Yu, J. Dai, H. Xiong, 2013 .

Terahertz intersubband transition in GaN/AlGaN step quantum well

Wu Tian, Jun Zhang, Feng Wu, 2013 .

Optical properties of the nonpolar a-plane MgZnO films grown on a-GaN/r-sapphire templates by pulsed laser deposition

Mingkai Li, Yunbin He, Feng Wu, 2014 .

Numerical analysis on the effects of multi-quantum last barriers in AlGaN-based ultraviolet light-emitting diodes

M. Zhang, J. Dai, Changqin Chen, 2015 .

The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition

Feng Wu, J. Dai, Changqin Chen, 2014 .

Long-Range Surface Plasmon Polaritons for Efficient Optical Coupling in AlGaN/GaN Quantum Well Infrared Photodetector

C. Chen, S. Wang, J. Dai, 2016, Plasmonics.

Efficient optical coupling in AlGaN/GaN quantum well infrared photodetector via quasi-one-dimensional gold grating.

J Zhang, C. Chen, Y. Tian, 2015, Optics express.

The influence of AlN buffer layer thickness grown by pulsed atomic layer epitaxy on the properties of GaN epilayer

Jin Zhang, C. Q. Chen, H. Xiong, 2011, Other Conferences.

Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes by using staggered quantum wells

M. Zhang, J. Dai, Changqin Chen, 2014 .

Improvement of blue InGaN light-emitting diodes with gradually increased barrier heights from n- to p-layers

J. Dai, Changqin Chen, W. Tian, 2013, Frontiers of Optoelectronics.