S. Soloviev

发表

Optimization of Holding Current in 4H-SiC Thyristors

A. Elasser, S. Arthur, Liangchun Yu, 2013 .

An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers

A. Danilewsky, P. McNally, L. Rowland, 2007 .

Aluminum and Boron Diffusion into (1-100) Face SiC Substrates

T. Sudarshan, S. Soloviev, Ying Gao, 2002 .

Forward voltage drop degradation in diffused SiC p-i-n diodes

T. Sudarshan, Y. Ma, D. I. Cherednichenko, 2004 .

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

B. K. Ng, J. David, C. M. Johnson, 2009 .

Numerical simulation of 4H-SiC deep and vacuum UV photodetectors

A. Bolotnikov, L. Rowland, A. Vert, 2009, 2009 International Semiconductor Device Research Symposium.

Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability

A. Vert, P. Sandvik, J. Fronheiser, 2009 .

Weak Signals Detection and Single Photon Counting with Ultraviolet SiC-based Avalanche Photodiodes

H. Cha, A. Vertiatchikh, P. Sandvik, 2007, LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings.

High Voltage Schottky Barrier Diodes on P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge Termination

T. Sudarshan, S. Soloviev, V. Madangarli, 1999 .

Thick Oxide Layers on N and P SiC Wafers by a Depo-Conversion Technique

T. Sudarshan, S. Soloviev, I. Khlebnikov, 1999 .

Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes

J. David, C. M. Johnson, S. Arthur, 2007 .

Silicon carbide photomultipliers and avalanche photodiode arrays for ultraviolet and solar-blind light detection

A. Bolotnikov, A. Vert, P. Sandvik, 2009, 2009 IEEE Sensors.

Assessment of structural body imbalances in patients with temporomandibular joint dysfunction

S. Soloviev, A. S. Rozhdestvensky, D. A. Rozhdestvensky, 2020, Russian Osteopathic Journal.

Magnetic Storms in October 2003

G. S. Ivanov-Kholodny, N. Kleimenova, O. Kozyreva, 2004 .

Investigation of boron diffusion in 6H-SiC

T. Sudarshan, S. Soloviev, Ying Gao, 2003 .

Observation of dislocations in diffused 4H-SiC p-i-n diodes by electron-beam induced current

S. Maximenko, T. Sudarshan, D. I. Cherednichenko, 2005 .

Deep UV photon-counting detectors and applications

Gary A. Shaw, Andrew M. Siegel, Joshua Model, 2009, Defense + Commercial Sensing.

Impact Ionization Coefficients in 4H-SiC

Ho-Young Cha, C.M. Johnson, B. K. Ng, 2008, IEEE Transactions on Electron Devices.

Electron-beam-induced current observed for dislocations in diffused 4H-SiC P-N diodes

S. Maximenko, T. Sudarshan, D. I. Cherednichenko, 2004 .

Selective doping of 4H-SiC by codiffusion of aluminum and boron

C. Tin, T. Sudarshan, S. Soloviev, 2001 .

Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETs

K. Matocha, G. Dunne, S. Soloviev, 2008, IEEE Transactions on Electron Devices.

Processing Porous SiC: Diffusion, Oxidation, Contact Formation

T. Sudarshan, S. Soloviev, 2008 .

Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices

G. Dunne, L. Rowland, J. Fronheiser, 2007 .

Boron diffusion into 6H-SiC through graphite mask

Tangali S. Sudarshan, S. Soloviev, X. Wang, 2001 .

Anomalous Capture and Emission from Internal Surfaces of Semiconductor Voids: Nanopores in SiC

J. Boeckl, D. Look, T. Sudarshan, 2004 .

Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers

K. Matocha, G. Dunne, Z. Stum, 2008 .

Temperature Dependent Characteristics of Nonreach-Through 4H-SiC Separate Absorption and Multiplication APDs for UV Detection

H. Cha, P. Sandvik, S. Zelakiewicz, 2008, IEEE Sensors Journal.

Detection

M. Melamed, G. Dunne, S. Ichiyama, 2018, Encyclopedia of Social Network Analysis and Mining. 2nd Ed..

Characterisation of Low Noise 4H-SiC Avalanche Photodiodes

R. C. Tozer, J. David, P. Sandvik, 2010 .

Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement

R. C. Tozer, B. K. Ng, J. David, 2012, IEEE Transactions on Electron Devices.

Performance of Silicon Carbide Avalanche Photodiode Arrays and Photomultipliers

A. Vert, P. Sandvik, S. Soloviev, 2010 .

Planar 4H- and 6H-SiC p–n diodes fabricated by selective diffusion of boron

T. Sudarshan, S. Soloviev, Ying Gao, 2001 .

Bipolar Degradation in 4H-SiC Thyristors

P. Losee, J. Garrett, A. Elasser, 2012 .

Surface Preparation of 6H-SiC Substrates by Electron Beam Annealing

A. M. Svetlichnyi, V. V. Milenin, O. B. Okhrimenko, 2005 .

An evaluation of an automated detection algorithm to count defects present in X-Ray topographical images of SiC wafers

A. Danilewsky, P. McNally, L. Rowland, 2007 .