Iain Buchanan

发表

Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

Helena Ronkainen, Simo-Pekka Hannula, Harri Lipsanen, 2014 .

Comparative study of ALD SiO 2 thin films for optical applications

Umut T. Sanli, A. Tünnermann, G. Schütz, 2016 .

Low temperature ALD of SiO2/Al2O3 multilayer structures constructed on self-standing films of cellulose nanofibrils

Jari, T. Sajavaara, Ulla Forsström, 2018 .

Low-temperature atomic layer deposition of SiO2/Al2O3 multilayer structures constructed on self-standing films of cellulose nanofibrils

T. Sajavaara, Ulla Forsström, P. Simell, 2018, Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences.

Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies.

W. Kessels, H. Knoops, T. Faraz, 2017, ACS applied materials & interfaces.

Nanosession: Atomic Layer Deposition

R. Waser, C. Hwang, N. Aslam, 2013 .

Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories

Byung Joon Choi, Seol Choi, C. Hwang, 2012 .

Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge2Sb2Te5 Film for Phase Change Memory Application

Byung Joon Choi, C. Hwang, S. Ivanov, 2015 .

Chemical interaction and ligand exchange between a [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3 films

Byung Joon Choi, C. Hwang, Taehong Gwon, 2015 .

Atomic Layer Deposition of GeTe Films Using Ge{N[Si(CH3)3]2}2, {(CH3)3Si}2Te, and Methanol

C. Hwang, D. Cho, S. Ivanov, 2016 .

Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms

C. Hwang, S. Ivanov, Taehong Gwon, 2017 .

Influence of the Kinetic Adsorption Process on the Atomic Layer Deposition Process of (GeTe2)(1–x)(Sb2Te3)x Layers Using Ge4+–Alkoxide Precursors

Byung Joon Choi, C. Hwang, Taehong Gwon, 2014 .

Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies.

W. Kessels, H. Knoops, T. Faraz, 2017, ACS Applied Materials and Interfaces.