M.T. Alam

Parameter Extraction and SPICE Model Development for 4H-Silicon Carbide (SiC) Power MOSFET

M. Hasanuzzaman, S. Islam, M. Hasanuzzaman, 2005, 2005 International Semiconductor Device Research Symposium.

Experimental demonstration of non-majority, nanomagnet logic gates

W. Porod, X.S. Hu, E. Varga, 2010, 68th Device Research Conference.

Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)

L. Tolbert, L.M. Tolbert, M. Hasanuzzama, 2003, International Semiconductor Device Research Symposium, 2003.

LIQUID ANALOG CIRCUITS FOR LABORATORY SIMULATION OF STEADY-STATE SEEPAGE

Vahid Nourani, Mohammad Taghi Alam, Elnaz Sharghi, 2014 .