Peng Cui

发表

Electrical properties of 90-nm InAlN/GaN HEMT on silicon substrate

Yuping Zeng, Peng Cui, 2021 .

High-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg

Andrew J. Mercante, D. Prather, P. Yao, 2019, Applied Physics Express.

One-Volt TiO₂ Thin Film Transistors With Low-Temperature Process

C. Ni, Yuping Zeng, Peng Cui, 2021, IEEE Electron Device Letters.

Ultrathin-Body TiO2 Thin Film Transistors With Record On-Current Density, ON/OFF Current Ratio, and Subthreshold Swing via O2 Annealing

J. Vohs, S. McDonnell, Yuping Zeng, 2019, IEEE Electron Device Letters.

Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors

Zhaojun Lin, Ming-Ju Yang, Peng Cui, 2018, Journal of Physics and Chemistry of Solids.

Scaling Behavior of Sub-100 nm InAlN/GaN HEMTs on Silicon for RF Applications

Yuping Zeng, Peng Cui, 2021 .

Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors

Zhaojun Lin, C. Luan, Peng Cui, 2020 .

Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

Zhaojun Lin, Ming-Ju Yang, Peng Cui, 2017 .

Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs

Zhaojun Lin, Ming-Ju Yang, C. Luan, 2017, IEEE Transactions on Electron Devices.

Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors

Zhaojun Lin, Zhihong Feng, Ming-Ju Yang, 2016 .

Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering

Zhaojun Lin, Y. Lv, Zhihong Feng, 2016, IEEE Transactions on Electron Devices.

Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes

Zhaojun Lin, Zhihong Feng, Ming-Ju Yang, 2015 .

Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs

Zhaojun Lin, C. Luan, Peng Cui, 2018, Scientific Reports.

High performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel and plasma enhanced atomic layer-deposited ZrO2 gate dielectric

C. Ni, T. Beebe, S. McDonnell, 2019, Applied Physics Express.

Influence of polarization Coulomb field scattering on high-temperature electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Zhaojun Lin, Peng Cui, Yuanjie Lv, 2018, Superlattices and Microstructures.

Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Zhaojun Lin, Ming-Ju Yang, Peng Cui, 2017 .

A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Zhaojun Lin, Peng Cui, Yuanjie Lv, 2017 .

Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate

C. Ni, Cheng Li, Songyan Chen, 2020 .

Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation

Yuping Zeng, Peng Cui, 2022, Nanomaterials.

Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation

C. Ni, S. McDonnell, Yuping Zeng, 2021, ACS Applied Electronic Materials.

Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate

Cheng Li, Songyan Chen, Yuping Zeng, 2020, Semiconductor Science and Technology.

Structural fluctuation effect on the polaron in DNA

C. Liu, Jian Wu, Peng Cui, 2009 .

Enhancement-/Depletion-Mode TiO2 Thin-Film Transistors via O2/N2 Preannealing

L. Gundlach, Yuping Zeng, Zhengxin Li, 2020, IEEE Transactions on Electron Devices.

Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors

Y. Chueh, J. Xiao, Yuping Zeng, 2019, Journal of Physics D: Applied Physics.

Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal-insulator-semiconductor high-electron -mobility transistors

Zhaojun Lin, Yuping Zeng, Peng Cui, 2022, Microelectron. J..

InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric

L. Gundlach, Yuping Zeng, Peng Cui, 2020, Japanese Journal of Applied Physics.

Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications

Yuping Zeng, Peng Cui, 2022, Scientific Reports.

Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current

Yuping Zeng, Peng Cui, 2021 .

Hole polarons in poly(G)-poly(C) and poly(A)-poly(T) DNA molecules

Chengbu Liu, Peng Cui, C. Liu, 2008 .

InAs FinFETs Performance Enhancement by Superacid Surface Treatment

R. Opila, P. Taheri, A. Javey, 2019, IEEE Transactions on Electron Devices.

High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application

N. Moser, K. Chabak, J. Xiao, 2023, Semiconductor Science and Technology.

High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed.

Yan Peng, K. Cheong, Lei Ge, 2023, The journal of physical chemistry letters.

Singular Boolean networks: Semi-tensor product approach

Jun‐e Feng, Juan Yao, Peng Cui, 2012, Science China Information Sciences.

Study of electrical transport properties of GaN-based side-gate heterostructure transistors

Zhaojun Lin, Peng Cui, Yuanjie Lv, 2022, Applied Physics Letters.

RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon

Q. Cheng, S. Khandelwal, Yuping Zeng, 2020 .

InAlN/GaN HEMT on Si With fmax = 270 GHz

J. Xiao, L. Gundlach, Yuping Zeng, 2021, IEEE Transactions on Electron Devices.

Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack

Zhaojun Lin, Peng Cui, Yuanjie Lv, 2022, Solid-State Electronics.

Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs

Zhaojun Lin, Peng Cui, Yuanjie Lv, 2018, Scientific Reports.

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Zhaojun Lin, Peng Cui, Yuanjie Lv, 2018, Scientific Reports.

Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors

Zhaojun Lin, Peng Cui, Yuanjie Lv, 2017 .

Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs

Zhaojun Lin, Zhihong Feng, Ming-Ju Yang, 2016, IEEE Transactions on Electron Devices.

Polaron transport between DNA segments: annihilating and creating

Jian Wu, Peng Cui, Guiqing Zhang, 2009 .

Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer

A. T. Johnson, Meng-qiang Zhao, L. Gundlach, 2019, Journal of Physics D: Applied Physics.

Sub-60 mV/decade Switching via Hot Electron Transfer in Nanoscale GaN HEMTs

Yuping Zeng, Peng Cui, Guangyang Lin, 2020, IEEE Electron Device Letters.

Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors

Zhaojun Lin, Peng Cui, Yuanjie Lv, 2017 .

Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Zhaojun Lin, Gang Dai, Peng Cui, 2018, Scientific Reports.

Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing

Yuping Zeng, R. Hickey, Peng Cui, 2023, Vacuum.

Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis(trifluoromethane) sulfonamide treatment

A. T. Johnson, Meng-qiang Zhao, L. Gundlach, 2020, Journal of Physics D: Applied Physics.

The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs

Yuping Zeng, Peng Cui, Guangyang Lin, 2019, Journal of Physics D: Applied Physics.

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Zhaojun Lin, Peng Cui, Yuanjie Lv, 2018, Scientific Reports.

Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Zhaojun Lin, Gang Dai, Peng Cui, 2018, Scientific Reports.