Guangyang Lin

发表

High-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg

Andrew J. Mercante, D. Prather, P. Yao, 2019, Applied Physics Express.

One-Volt TiO₂ Thin Film Transistors With Low-Temperature Process

C. Ni, Yuping Zeng, Peng Cui, 2021, IEEE Electron Device Letters.

Ultrathin-Body TiO2 Thin Film Transistors With Record On-Current Density, ON/OFF Current Ratio, and Subthreshold Swing via O2 Annealing

J. Vohs, S. McDonnell, Yuping Zeng, 2019, IEEE Electron Device Letters.

Simulation of the effects of defects in low temperature Ge buffer layer on dark current of Si-based Ge photodiodes

Wei Huang, Jun Li, Cheng Li, 2017 .

Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate*

Cheng Li, Songyan Chen, Wei Huang, 2017 .

High performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel and plasma enhanced atomic layer-deposited ZrO2 gate dielectric

C. Ni, T. Beebe, S. McDonnell, 2019, Applied Physics Express.

Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

Chen Wang, Cheng Li, H. Lai, 2013 .

Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate

C. Ni, Cheng Li, Songyan Chen, 2020 .

Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation

C. Ni, S. McDonnell, Yuping Zeng, 2021, ACS Applied Electronic Materials.

Formation of nickel germanide on SiO2-capped n-Ge to lower its Schottky barrier height

Chen Wang, Cheng Li, Songyan Chen, 2013 .

Charge Trapping Properties of Au Nanocrystals with Various Sizes for Non-Volatile Memory Applications

H. Lai, Guangyang Lin, R. Tang, 2013 .

Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing

Kun Qian, J. Kolodzey, Cheng Li, 2022, Journal of Alloys and Compounds.

High-specific-detectivity, low-dark-current Ge nanowire metal–semiconductor–metal photodetectors fabricated by Ge condensation method

Cheng Li, Songyan Chen, Wei Huang, 2020, Journal of Physics D: Applied Physics.

Phosphorus diffusion in germanium following implantation and excimer laser annealing

Chen Wang, Cheng Li, H. Lai, 2014 .

Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact

Chen Wang, Cheng Li, Songyan Chen, 2016 .

The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%

Kun Qian, Cheng Li, Songyan Chen, 2022, SSRN Electronic Journal.

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Kun Qian, Cheng Li, Songyan Chen, 2022, Journal of Alloys and Compounds.

Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated by three-dimensional Ge condensation technique.

Cheng Li, Songyan Chen, Guangyang Lin, 2019, Optics express.

Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Implantation and Excimer Laser Annealing

Chen Wang, Cheng Li, H. Lai, 2013 .

Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate

Cheng Li, Songyan Chen, Yuping Zeng, 2020, Semiconductor Science and Technology.

Fabrication and modeling of SiGe and Ge nanowires on insulator by three-dimensional Ge condensation method

Cheng Li, Songyan Chen, Yuping Zeng, 2019, Semiconductor Science and Technology.

Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature

Cheng Li, Songyan Chen, Wei Huang, 2019, Materials Science in Semiconductor Processing.

Spin-on doping of phosphorus on Ge with a 9 nm amorphous Si capping layer to achieve n+/p shallow junctions through rapid thermal annealing

Cheng Li, Songyan Chen, Wei Huang, 2019, Journal of Physics D: Applied Physics.

Enhancement-/Depletion-Mode TiO2 Thin-Film Transistors via O2/N2 Preannealing

L. Gundlach, Yuping Zeng, Zhengxin Li, 2020, IEEE Transactions on Electron Devices.

Homoepitaxy of Ge on ozone-treated Ge (1 0 0) substrate by ultra-high vacuum chemical vapor deposition

Cheng Li, Songyan Chen, Jiaqi Wang, 2019, Journal of Crystal Growth.

Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors

Y. Chueh, J. Xiao, Yuping Zeng, 2019, Journal of Physics D: Applied Physics.

InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric

L. Gundlach, Yuping Zeng, Peng Cui, 2020, Japanese Journal of Applied Physics.

Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries

Qiaobao Zhang, Xiang Han, Shunqing Wu, 2022, Nano Research.

Non-homogeneous SiGe-on-insulator formed by germanium condensation process

陈松岩, Chen Wang, Cheng Li, 2014 .

Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

Cheng Li, Songyan Chen, Wei Huang, 2016, Materials.

High gain, broadband p-WSe_2/n-Ge van der Waals heterojunction phototransistor with a Schottky barrier collector

Cheng Li, Songyan Chen, Wei Huang, 2022, Nano Research.

InAs FinFETs Performance Enhancement by Superacid Surface Treatment

R. Opila, P. Taheri, A. Javey, 2019, IEEE Transactions on Electron Devices.

InAlN/GaN HEMT on Si With fmax = 270 GHz

J. Xiao, L. Gundlach, Yuping Zeng, 2021, IEEE Transactions on Electron Devices.

Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature

Chen Wang, Cheng Li, H. Lai, 2016 .

Low dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors.

Cheng Li, Songyan Chen, Wei Huang, 2018, Optics express.

Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si0.73Ge0.27 epilayer

Chen Wang, Cheng Li, H. Lai, 2013 .

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications

J. Kolodzey, Cheng Li, Songyan Chen, 2023, Nanophotonics.

Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer

A. T. Johnson, Meng-qiang Zhao, L. Gundlach, 2019, Journal of Physics D: Applied Physics.

Strain evolution of SiGe-on-insulator fabricated by germanium condensation method with over-oxidation

Cheng Li, H. Lai, Songyan Chen, 2016 .

Raman scattering study of amorphous GeSn films and their crystallization on Si substrates

Cheng Li, Songyan Chen, Wei Huang, 2016 .

High-Performance Ge p-n Photodiode Achieved With Preannealing and Excimer Laser Annealing

Wei Huang, Songyan Chen, Hongkai Lai, 2015, IEEE Photonics Technology Letters.

Sub-60 mV/decade Switching via Hot Electron Transfer in Nanoscale GaN HEMTs

Yuping Zeng, Peng Cui, Guangyang Lin, 2020, IEEE Electron Device Letters.

Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing

Chen Wang, Cheng Li, H. Lai, 2014, IEEE Transactions on Electron Devices.

Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing

Yuping Zeng, R. Hickey, Peng Cui, 2023, Vacuum.

Impacts of Dislocations on the Anisotropic Etching of Ge/Si for Suspended Ge Membrane

Cheng Li, H. Lai, Songyan Chen, 2016 .

Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis(trifluoromethane) sulfonamide treatment

A. T. Johnson, Meng-qiang Zhao, L. Gundlach, 2020, Journal of Physics D: Applied Physics.

Resistive switching properties of polycrystalline HfOxNy films by plasma-enhanced atomic layer deposition

Cheng Li, H. Lai, Songyan Chen, 2017 .

The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs

Yuping Zeng, Peng Cui, Guangyang Lin, 2019, Journal of Physics D: Applied Physics.

Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence

Kun Qian, Cheng Li, Songyan Chen, 2021, Applied Surface Science.

Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

Chen Wang, Cheng Li, Songyan Chen, 2014 .

Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering

Kun Qian, Cheng Li, Songyan Chen, 2023, SSRN Electronic Journal.

Impacts of excimer laser annealing on Ge epilayer on Si

Cheng Li, Songyan Chen, Wei Huang, 2017 .

Silicon Nanowire Array Weaved by Carbon Chains for Stretchable Lithium-Ion Battery Anode.

Songyan Chen, Guangyang Lin, Ziqi Zhang, 2023, Small.

Modulation of WN x /Ge Schottky barrier height by varying N composition of tungsten nitride

Chen Wang, Cheng Li, Songyan Chen, 2015 .

Solid-State Lithium Batteries with Ultrastable Cyclability: An Internal-External Modification Strategy.

Songyan Chen, Mingsheng Wang, Guangyang Lin, 2024, ACS nano.

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO2/Si substrates

Songyan Chen, Wei Huang, Guangyang Lin, 2024, Journal of Physics D: Applied Physics.

Schottky Barrier Height Modification of Graphene/Ge by Al2O3 Interfacial Layer and Au Nanoparticles for High-Gain Short-Wavelength Infrared Photodetectors

Guangyang Lin, Songsong Wu, Haokun Ding, 2024, IEEE Transactions on Electron Devices.