Y. Yue

发表

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

Xiang Gao, Zongyang Hu, Tian Fang, 2012, IEEE Electron Device Letters.

Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs

D. Jena, H. Xing, Zongyang Hu, 2014 .

Study of GaN MOS-HEMT using ultrathin Al2O3 dielectric grown by atomic layer deposition

Y. Hao, Xiao-hua Ma, Q. Feng, 2009 .

Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing

D. Jena, H. Xing, Wenjun Li, 2014 .

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

Wei Mao, Yue Hao, Qian Feng, 2008, IEEE Electron Device Letters.

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

E. Beam, D. Jena, H. Xing, 2014, IEEE Transactions on Electron Devices.

Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation

Huili Grace Xing, Ronghua Wang, O. Laboutin, 2013, 2013 IEEE International Electron Devices Meeting.

Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

G. Snider, D. Jena, H. Xing, 2013 .

Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz

Yu Cao, Zongyang Hu, Ronghua Wang, 2013, IEEE Electron Device Letters.

InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and fT/fmax of 260/220 GHz

Yu Cao, Patrick Fay, Zongyang Hu, 2012 .

InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_{\text{T}}/f_{\text{max}} of 260/220 GHz

Yu Cao, G. Snider, D. Jena, 2013 .

Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts

Yu Cao, D. Jena, H. Xing, 2012, IEEE Electron Device Letters.

Dynamic Modeling and Power Loss Analysis of High-Frequency Power Switches Based on GaN CAVET

Dong Ji, Srabanti Chowdhury, Jianyi Gao, 2016, IEEE Transactions on Electron Devices.

Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases

Huili Grace Xing, Patrick Fay, Berardi Sensale-Rodriguez, 2014 .

The reduction of gate leakage of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors by N2 plasma pretreatment

Y. Hao, Q. Feng, Y. Yue, 2009 .