Jinwook W. Chung

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

Patrick Fay, Xiang Gao, Shiping Guo, 2011, IEEE Electron Device Letters.

Advanced gate technologies for state-of-the-art fT in AlGaN/GaN HEMTs

Tomas Palacios, Tae-Woo Kim, T. Palacios, 2010, 2010 International Electron Devices Meeting.

On-wafer integration of nitrides and Si devices: Bringing the power of polarization to Si

Tomas Palacios, Jinwook W. Chung, Bin Lu, 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

Ion beam nitridation of a Si(111) surface: effects of ion reactivity and thermal treatment

Heon Kang, B. C. Kim, Jinwook W. Chung, 1994 .

Structural and electronic properties of the quasi-one-dimensional metallic chains of the Au-induced facets on the Si(5 5 12) surface

H. Song, C. Hwang, Jinwook W. Chung, 2002 .