B. Willén

Unilateral power gain limitations due to dynamic base widening effects

M. Rohner, H. Jackel, B. Willén, 2001, IEEE Electron Device Letters.

Sub-f/sub t/ gain resonance of InP/InGaAs-HBTs

M. Rohner, H. Jäckel, B. Willén, 2002 .

Highly doped p+ regions by zinc diffusion utilizing metalorganic vapor‐phase epitaxy

Dan Haga, M. Linnarsson, Margareta K. Linnarsson, 1992 .

High-gain, high-speed InP/InGaAs double-heterojunction bipolar transistors with a step-graded base-collector heterojunction

U. Westergren, H. Asonen, B. Willén, 1995, IEEE Electron Device Letters.

Growth and performance of AlGaAs/GaAs heterostructure bipolar transistors

N. Nordell, U. Westergren, B. Willén, 1991 .

Velocity modulation in III/V-HBTs

M. Rohner, H. Jäckel, B. Willén, 2003 .