Wen Yang

Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs

P. Shea, Balakrishnan Krishnan, Sakeenah Khan, 2019, ECS Journal of Solid State Science and Technology.

Characterization of Deep and Shallow Traps in GaN HEMT Using Multi-Frequency C-V Measurement and Pulse-Mode Voltage Stress

Jiann-Shiun Yuan, P. Shea, Balakrishnan Krishnan, 2019, IEEE Transactions on Device and Materials Reliability.

Substrate Bias Enhanced Trap Effects on Time-Dependent Dielectric Breakdown of GaN MIS-HEMTs

Jiann-Shiun Yuan, Wen Yang, 2021, IEEE Transactions on Electron Devices.

Experimental investigation of buffer traps physical mechanisms on the gate charge of GaN-on-Si devices under various substrate biases

Jiann-Shiun Yuan, Wen Yang, 2020 .

Negative-Bias Temperature Instability of p-GaN Gate GaN-on-Si Power Devices

Jiann-Shiun Yuan, Wen Yang, 2022, IEEE Transactions on Device and Materials Reliability.

Low-Side GaN Power Device Dynamic Ron Characteristics Under Different Substrate Biases

Patrick Shea, Jiann-Shiun Yuan, Balakrishnan Krishnan, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Switching Loss Characterization of GaN-based Buck Converter under Different Substrate Biases

Jiann-Shiun Yuan, Wen Yang, B. Krishnan, 2019, 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

C-V Measurement under Different Frequencies and Pulse-mode Voltage Stress to Reveal Shallow and Deep Trap Effects of GaN HEMTs

W. Yeh, Jiann-Shiun Yuan, Balakrishnan Krishnan, 2018, 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).