R. Therrien

发表

Material, process, and device development of GaN-based HFETs on silicon substrates

Andrei Vescan, John C. Roberts, S. Singhal, 2004 .

Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

John C. Roberts, Stephen J. Pearton, Brent P. Gila, 2005 .

Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

John C. Roberts, Stephen J. Pearton, Brent P. Gila, 2004 .

Thermal stability of metallizations on GaN/AlxGa1−xN/GaN heterostructures

S. Mohney, J. Robinson, J. A. Robinson, 2005 .

12 W/mm AlGaN-GaN HFETs on silicon substrates

A. Vescan, J.D. Brown, S. Singhal, 2004, IEEE Electron Device Letters.

A Comparison of AlGaN/GaN HFETs on Si Substrates in Ceramic Air Cavity and Plastic Overmold Packages

W. Nagy, K. Linthicum, I. Kizilyalli, 2007, 2007 IEEE/MTT-S International Microwave Symposium.

Remote Plasma Enhanced-Metal Organic Chemical Vapor Deposition of Zirconium Oxide/Silicon Oxide Alloy, (ZrO 2 ) 1 -(SiO 2 ) 1−x (x:≤0.5), Thin Films for Advanced High-K Gate Dielectrics

R. S. Johnson, G. Lucovsky, Robert S. Johnson, 1999 .

Charge redistribution at GaN–Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces

G. Lucovsky, R. Davis, R. Therrien, 2000 .

X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms

R. Davis, R. Nemanich, S. King, 1999 .

Qualification and Reliability of a GaN Process Platform

S. Singhal, Robert Joseph Therrien, Pradeep Rajagopal, 2007 .

GaN-ON-Si Failure Mechanisms and Reliability Improvements

S. Singhal, P. Rajagopal, K. Linthicum, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Reliability of large periphery GaN-on-Si HFETs

T. Li, P. Rajagopal, J. C. Roberts, 2005, [Reliability of Compound Semiconductors] ROCS Workshop, 2005..

Electrical detection of deoxyribonucleic acid hybridization with AlGaN/GaN high electron mobility transistors

B. S. Kang, F. Ren, S. Pearton, 2006 .

Field-Plated 0.25-μm Gate-Length AlGaN/GaN HEMTs With Varying Field-Plate Length

Andrei Vescan, John C. Roberts, S. Singhal, 2006 .

Device Degradation Phenomena in GaN HFET Technology: Status, Mechanisms, and Opportunities

S. Singhal, P. Rajagopal, K. Linthicum, 2006, 2006 International Electron Devices Meeting.

AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon ( 1 1 1 ) substrates

Andrei Vescan, S. Singhal, J. D. Brown, 2002 .

AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications

Andrei Vescan, John C. Roberts, S. Singhal, 2003 .

Charge Redistribution at GaN–Ga2O3 Interfaces: A Microscopic Mechanism for Low Defect Density Interfaces in Remote Plasma Processed MOS Devices Prepared on Polar GaN Faces

G. Lucovsky, R. Davis, R. Therrien, 1999 .