J. Brown

发表

Material, process, and device development of GaN-based HFETs on silicon substrates

Andrei Vescan, John C. Roberts, S. Singhal, 2004 .

Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

J. F. Schetzina, Hua-Shuang Kong, J. D. Brown, 1997 .

MICROWAVE GaN-BASED POWER TRANSISTORS ON LARGE-SCALE SILICON WAFERS

K. Linthicum, A. Pham, J. Brown, 2003 .

Characteristics of microwave power GaN HEMTs on 4-inch Si wafers

K. Linthicum, R. Borges, K. Linthicum, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

Solar-Blind AlGaN Heterostructure Photodiodes

Jizhong Li, J. Matthews, J. Schetzina, 2000 .

PERFORMANCE AND RF RELIABILITY OF GaN-ON-SiC HEMTs USING DUAL-GATE ARCHITECTURES (PREPRINT)

D. Green, R. Vetury, J. Brown, 2007 .

AFRL-ML-WP-TP-2007-419 PERFORMANCE AND RF RELIABILITY OF GaNON-SiC HEMTs USING DUAL-GATE ARCHITECTURES ( PREPRINT )

K., Ramakrishna Vetury, D. Green, 2005 .

AFRL-ML-WP-TP-2007-419 PERFORMANCE AND RF RELIABILITY OF GaN-ON-SiC HEMTs USING DUAL-GATE

D. Green, J. Blevins, J. Shealy, 2005 .

Linearity characteristics of microwave-power GaN HEMTs

S. Singhal, J. D. Brown, W. Nagy, 2003 .

Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes

J. F. Schetzina, Thomas E. Nohava, J. D. Brown, 1999 .

Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence

J. Schetzina, Z. Yu, J. Brown, 1998 .

Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures

N. El-Masry, J. Schetzina, H. Kong, 1998 .

Large-Area, Device Quality GaN on Si Using a Novel Transition Layer Scheme

John C. Roberts, J. D. Brown, Pradeep Rajagopal, 2002 .

Polarization engineered 1-dimensional electron gas arrays

U. Mishra, S. Keller, S. Rajan, 2012 .

Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys

John F. Muth, J. F. Schetzina, Mark Johnson, 1999 .

Symposium Y: Gan and Related Alloys MOCVD AlGaN/GaN HFETs on Si: Challenges and Issues

John C. Roberts, J. D. Brown, Pradeep Rajagopal, 2003 .

Study of the epitaxial–lateral-overgrowth (ELO) process for GaN on sapphire

N. El-Masry, J. Schetzina, Z. Yu, 1998 .

Field-Plated 0.25-μm Gate-Length AlGaN/GaN HEMTs With Varying Field-Plate Length

Andrei Vescan, John C. Roberts, S. Singhal, 2006 .

AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon ( 1 1 1 ) substrates

Andrei Vescan, S. Singhal, J. D. Brown, 2002 .

MicroDosimeter iNstrument (MIDN) on MidSTAR-I

M. Zaider, J. Ziegler, M. Nelson, 2006 .

Remote plasma chemical vapour deposition of group III-nitride tunnel junctions for LED applications

J. D. Brown, S. Barik, D. Liu, 2019, OPTO.

AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications

Andrei Vescan, John C. Roberts, S. Singhal, 2003 .

High Spatial Resolution SIMS Depth Profiling of Cr Dopant in CdSe Thin Film Transistors

F. Shepherd, J. Brown, W. Westwood, 1982 .

Absorption Coefficient and Refractive Index of GaN, AIN and AlGaN Alloys

John F. Muth, J. F. Schetzina, Mark Johnson, 1998 .

Thermal Conductivity of GaN Grown on Silicon Substrates

J. Muth, P. Rajagopal, Yun‐Chorng Chang, 2003 .