N. Akutsu

发表

High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 Gate Insulator

Hiromichi Ohashi, Hajime Okumura, Yoshiki Yano, 2006 .

GaN growth on 150-mm-diameter (1 1 1) Si substrates

T. Egawa, A. Yamaguchi, A. Ubukata, 2007 .

III-V Nitride Growth by Atmospheric-Pressure MOVPE with a Three-Layered Flow Channel

K. Uchida, M. Umeno, T. Egawa, 1996 .

Effects of growth pressure on AlGaN and Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system

A. Yamaguchi, A. Ubukata, Y. Yano, 2004 .

An analysis of temperature dependent photoluminescence line shapes in InGaN

W. Liu, K. Teo, K. Uchida, 1998 .

Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors

M. Shimizu, H. Okumura, T. Ide, 2007 .

p-Type InGaN Cap Layer for Normally Off Operation in AlGaN/GaN Heterojunction Field Effect Transistors

M. Shimizu, Y. Yano, M. Inada, 2008 .

Electronic properties of Cu-Ti metallic glasses

U. Mizutani, N. Akutsu, T. Mizoguchi, 1983 .

Normally‐off operation in AlGaN/GaN/AlGaN double heterojunction field effect transistors

M. Shimizu, H. Okumura, K. Arai, 2007 .

Low on‐resistance AlGaN/GaN HEMTs by reducing gate length and source‐gate length

M. Shimizu, H. Okumura, T. Ide, 2008 .

High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO2/SiN Gate Insulator

H. Ohashi, M. Shimizu, H. Okumura, 2007 .

Preparation of YBaCuO Superconducting Tape by RF Magnetron Sputtering

M. Fukutomi, H. Maeda, Yoshiaki Tanaka, 1989 .

Perpendicular magnetic Fe-Sn-O films

N. Akutsu, T. Mizoguchi, M. Akimitsu, 1986 .

PHOTOVOLTAIC SPECTROSCOPIC STUDY OF GAN EPILAYERS AND INGAN QUANTUM WELL STRUCTURES

Wei Liu, K. Teo, Koh Matsumoto, 1999 .

Effects of annealing and fabrication conditions on the magnetic properties of amorphous ferromagnetic alloys

S. Hatta, N. Akutsu, T. Mizoguchi, 1980 .

STRUCTURAL STUDY OF AN AMORPHOUS Ni 36 Zr 64 ALLOY

N. Watanabe, N. Akutsu, T. Mizoguchi, 1985 .

Growth condition dependence of Mg-doped GaN film grown by horizontal atmospheric MOCVD system with three layered laminar flow gas injection

A. Yamaguchi, Koh Matsumoto, N. Akutsu, 1998 .

Structure relaxation of an amorphous Mg.70Zn.30 alloy

N. Watanabe, N. Akutsu, N. Shiotani, 1984 .

Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy

Hajime Okumura, Yoshiki Yano, Nakao Akutsu, 2007 .

Quantum chemical mechanism in parasitic reaction of AlGaN alloys formation

K. Nakamura, Koh Matsumoto, A. Tachibana, 2000 .

Multiwafer atmospheric‐pressure MOVPE reactor for nitride semiconductors and ex‐situ dry cleaning of reactor components using chlorine gas for stable operation

Akira Yamaguchi, Koh Matsumoto, Hiroki Tokunaga, 2008 .

Quantum Chemical Studies of Gas Phase Reactions between TMA, TMG, TMI and NH3

Koh Matsumoto, A. Tachibana, N. Akutsu, 1999 .

An analysis of temperature dependent piezoelectric Franz–Keldysh effect in AlGaN

K. Teo, K. Uchida, Koh Matsumoto, 2000 .

NEUTRON DIFFRACTION STUDY OF AMORPHOUS BINARY ALLOYS

M. Nishi, N. Watanabe, N. Akutsu, 1982 .

Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphire

Soo Jin Chua, Nakao Akutsu, S. Chua, 1999 .