R. Lai

发表

Observing Electroluminescence from Yellow Luminescence-Like Defects in GaN High Electron Mobility Transistors

Guann-Pyng Li, Richard Lai, Reginald M. Penner, 2008 .

Monolithically integrated planar front-end photoreceivers with 0.25 mu m gate pseudomorphic In/sub 0.60/Ga/sub 0.40/As/In/sub 0.52/Al/sub 0.48/As/InP modulation-doped field-effect transistors

R. Lai, D. Pavlidis, T. Brock, 1991 .

Ultrahigh-sensitivity, ultrafast-response photoconductive probe

J. Whitaker, T. Norris, Jiunn-Ren Hwang, 1997 .

Lattice‐mismatched In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors on GaAs: Molecular‐beam epitaxial growth and device performance

Kevin H. Chang, P. Bhattacharya, R. Lai, 1990 .

Optical tuning of monolithic In0.53Ga0.47As/In0.52Al0.48As/InP modulation-doped field-effect transistor oscillators at X and R band

P. Bhattacharya, T. Brock, R. Lai, 1991 .

The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−x As/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes

Paul R. Berger, D. Pavlidis, G. Ng, 1990 .

Low‐loss, single‐mode In0.53Ga0.47As/In0.52Al0.48As/InP optical waveguides fabricated by Zn‐induced impurity‐induced layer disordering

P. Bhattacharya, J. Pamulapati, R. Lai, 1991 .

Monolithically integrated InP-based front-end photoreceivers

Dimitris Pavlidis, Paul R. Berger, R. Lai, 1991 .

High efficiency monolithic Ka-band oscillators using InAlAs/InGaAs HEMTs

Youngwoo Kwon, R. Lai, D. Pavlidis, 1991, [1991] GaAs IC Symposium Technical Digest.

A field‐sensitive photoconductive probe for sampling through passivation layers

Theodore B. Norris, John Nees, R. Lai, 1996 .

A fiber-mounted, micromachined photoconductive probe with 15 nV/Hz1/2 sensitivity

Theodore B. Norris, John Nees, R. Lai, 1996 .

Characteristics of 0.8- and 0.2- mu m gate length In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As/InP (0.53

R. Lai, Alan N. Downey, Samuel A. Alterovitz, 1992 .