W. Lundin

发表

III-N heterostructures for monolithic integration of enhancement/depletion-mode high-electron-mobility transistors

A. Tsatsul'nikov, A. V. Sakharov, D. Arteev, 2020 .

High-confinement gallium nitride-on-sapphire waveguides for integrated nonlinear photonics.

Minhao Pu, Kresten Yvind, Elizaveta Semenova, 2019, Optics letters.

High Q gallium nitride microring resonators

E. Semenova, K. Yvind, M. Pu, 2017, 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).

Highly Nonlinear Gallium Nitride Waveguides

E. Semenova, K. Yvind, M. Pu, 2018, 2018 Conference on Lasers and Electro-Optics (CLEO).

Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling

V. Dubrovskii, S. Troshkov, W. Lundin, 2015 .

Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes

N. V. Kryzhanovskaya, S. O. Usov, M. Hÿtch, 2010 .

Resonant Bragg structures based on III-nitrides

A. Sakharov, A. F. Tsatsulnikov, W. Lundin, 2015 .

Epitaxial Systems for III‐V and III‐Nitride MOVPE

W. Lundin, R. Talalaev, 2019, Metalorganic Vapor Phase Epitaxy (MOVPE).

MOVPE of III-N LED structures with short technological process

M. N. Mizerov, V. Ustinov, E. V. Yakovlev, 2015 .

Effects of reactor pressure and residence time on GaN MOVPE growth efficiency

D. Sizov, A. Tsatsul'nikov, E. V. Yakovlev, 2006 .

Quantum dots formed by ultrathin insertions in wide-gap matrices

I. Krestnikov, N. Ledentsov, Z. Alferov, 2000 .

Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts

D. A. Zakheim, S. Karpov, P. Brunkov, 2018 .

Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitride

D. A. Zakheim, S. Karpov, P. Brunkov, 2018, Semiconductor Science and Technology.

Terahertz Emission due to Radiative Decay of Hot 2D Plasmons in AlGaN/GaN Heterojunction

L. E. Vorobjev, M. D. Moldavskaya, V. Shalygin, 2019, 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

Correlation of diffusion length and trap concentration with dislocation density in MOCVD-grown GaN

N. M. Shmidt, A. Usikov, E. Yakimov, 2003 .

Deep centers in AlGaN-based light emitting diode structures

N. B. Smirnov, A. Polyakov, A. Govorkov, 1999 .

Effects of proton implantation on electrical and recombination properties of n-GaN

N. B. Smirnov, N. M. Shmidt, A. Polyakov, 2000 .

InGaN/GaN short-period superlattices: synthesis, properties, applications

Martin Hÿtch, N. V. Kryzhanovskaya, A. E. Chernyakov, 2011 .

Deep levels studies of AlGaN/GaN superlattices

N. B. Smirnov, N. M. Shmidt, S. Pearton, 2003 .

Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire

N. B. Smirnov, N. M. Shmidt, A. Polyakov, 2001 .

Specific features of gallium nitride selective epitaxy in round windows

A. Tsatsul'nikov, S. Troshkov, W. Lundin, 2011 .

Hydrogen effects in III-nitride MOVPE

A. Tsatsul'nikov, E. V. Yakovlev, A. S. Segal, 2008 .

Growth, optical and structural characterization of InGaN/GaN/AlGaN optically pumped lasers

A. Tsatsul'nikov, A. Sakharov, D. A. Bedarev, 2001 .

Composition dependence of optical phonon energies and Raman line broadening in hexagonal Al x Ga 1 − x N alloys

A. N. Smirnov, I. N. Goncharuk, V. Davydov, 2002 .

Proton irradiation effects on GaN-based epitaxial structures

A. N. Smirnov, D. A. Zakheim, A. Lebedev, 2020, Journal of Physics: Conference Series.

Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field

V. Shalygin, A. Sofronov, A. Tsatsul'nikov, 2011 .

Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study

D. Sizov, A. V. Sakharov, A. Fomin, 2004 .

Laser-Like Emission in the Blue-Green Spectral Range from InGaN/GaN/AlGaN Structures under Optical Pumping

N. Ledentsov, D. Bimberg, A. Tsatsul'nikov, 2001 .

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Martin Hÿtch, N. V. Kryzhanovskaya, A. E. Cherniakov, 2011 .

Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions

A. Tsatsul'nikov, A. V. Sakharov, A. Nikolaev, 2014 .

Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography

S. O. Usov, A. Tsatsul'nikov, A. Sakharov, 2018, Semiconductors.

MOVPE of device-oriented wide-band-gap III-N heterostructures

V. Ustinov, A. Tsatsul'nikov, A. V. Sakharov, 2010 .

Ga focused ion beam etching of a Si3N4/GaN substrate for submicron selective epitaxy

S. Troshkov, A. Sakharov, V. Evtikhiev, 2017 .

Gallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film

A. A. Vasilyev, V. Dubrovskii, V. Davydov, 2015 .

Localized-state ensemble model analysis of InGaN/GaN quantum well structures with different dislocation densities

A. V. Sakharov, A. F. Tsatsulnikov, D. Arteev, 2021, Semiconductor Science and Technology.

Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

S. O. Usov, N. Cherkashin, P. Brunkov, 2014 .

InGaN/GaN heterostructures grown by submonolayer deposition

S. O. Usov, M. N. Mizerov, Yu. G. Musikhin, 2012 .

Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

S. O. Usov, M. N. Mizerov, N. Cherkashin, 2012 .

Formation of composite InGaN/GaN/InAlN quantum dots

N. V. Kryzhanovskaya, S. O. Usov, N. Cherkashin, 2010 .

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

J. Merz, N. Cherkashin, M. Hÿtch, 2010 .

The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy

M. Kulagina, I. P. Smirnova, V. Davydov, 2015 .

Mapping of Fabry–Perot and whispering gallery modes in GaN microwires by nonlinear imaging

N. Hendricks, R. Grange, Y. Berdnikov, 2021, Nanotechnology.

Quantum dot origin of luminescence in InGaN-GaN structures

I. Krestnikov, N. Ledentsov, Yu. G. Musikhin, 2002 .

Emission spectrum control in monolithic blue-cyan dichromatic light-emitting diodes

S. O. Usov, S. Karpov, A. V. Sakharov, 2020, Semiconductor Science and Technology.

Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells

D. A. Zakheim, A. Tsatsul'nikov, A. V. Sakharov, 2019, Semiconductors.

Investigation of Statistical Broadening in InGaN Alloys

S. O. Usov, V. Davydov, A. Tsatsul'nikov, 2018, Journal of Physics: Conference Series.

Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters

I. P. Soshnikov, N. Ledentsov, D. Gerthsen, 2005 .

The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE

S. O. Usov, P. Brunkov, A. Tsatsul'nikov, 2020 .

Study of GaN doping with carbon from propane in a wide range of MOVPE conditions

P. Brunkov, A. Tsatsul'nikov, B. Ber, 2016 .

Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

S. O. Usov, V. Ustinov, N. Cherkashin, 2016 .

Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation

D. A. Zakheim, A. Tsatsul'nikov, A. V. Sakharov, 2019, Journal of Physics: Conference Series.

Critical spatial disorder in InGaN resonant Bragg structures

A. Ivanov, V. Chaldyshev, A. V. Sakharov, 2022, Applied Physics Letters.

2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions

M. D. Moldavskaya, V. Shalygin, A. V. Sakharov, 2020, Journal of Physics: Conference Series.

Two-dimensional plasmons in a GaN/AlGaN heterojunction

M. D. Moldavskaya, V. Shalygin, V. Korotyeyev, 2019, Journal of Physics: Conference Series.

Effect of hydrogen on anisotropy of the p-GaN growth rate in the case of side-wall MOCVD

A. Tsatsul'nikov, A. V. Sakharov, A. Nikolaev, 2008 .

Optical lattices of InGaN quantum well excitons

A. Tsatsul'nikov, V. Chaldyshev, A. V. Sakharov, 2011 .

Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells

D. Yakovlev, M. Bayer, S. Poltavtsev, 2018, Physical Review B.

Secondary Electron Emission Yields

W. Lundin, I. Krainsky, W. Gordon, 1981 .

Lasing in Vertical Direction in Structures with InGaN Quantum Dots

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes

N. Cherkashin, M. Hÿtch, A. Pecchia, 2017, Nanotechnology.

Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes

A. Carlo, N. Cherkashin, M. Hÿtch, 2017, Nanotechnology.

Formation of three-dimensional islands in the active region of InGaN based light emitting diodes using a growth interruption approach

S. O. Usov, N. Cherkashin, M. Hÿtch, 2015 .

Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells

V. Chaldyshev, A. V. Sakharov, A. F. Tsatsulnikov, 2017 .

Lattice dynamics and Raman spectra of strained hexagonal GaN/AlN and GaN/AlGaN superlattices

A. N. Smirnov, I. N. Goncharuk, S. Karpov, 2003 .

Phonons in short-period (GaN)m(AlN)n superlattices: ab initio calculations and group-theoretical analysis of modes and their genesis

A. N. Smirnov, V. Davydov, I. Eliseyev, 2019, Journal of Physics: Conference Series.

Elastic strains and delocalized optical phonons in AlN/GaN superlattices

A. N. Smirnov, V. Davydov, M. Smirnov, 2016 .

Optic and Acoustic Phonons in Strained Hexagonal GaN/AlGaN Multilayer Structures

A. N. Smirnov, I. N. Goncharuk, V. V. Emtsev, 2001 .

Low-pressure chemical vapour deposition growth of high-quality ZnO films on epi-GaN/α-Al2O3

B. Ataev, W. Lundin, E. Zavarin, 2001 .

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Formation of GaAsN nanoinsertions in a GaN matrix

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2001 .

Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

V. A. Semenov, I. Krestnikov, N. Ledentsov, 1999 .

Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix

V. A. Semenov, I. P. Soshnikov, I. Krestnikov, 1999 .

Surface-mode lasing from stacked InGaN insertions in a GaN matrix

V. A. Semenov, I. Krestnikov, N. Ledentsov, 1999 .

High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range

A. L. Zakgeim, S. O. Usov, A. Tsatsul'nikov, 2010 .

Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors

D. A. Zakheim, P. Brunkov, A. V. Sakharov, 2020, Journal of Physics: Conference Series.

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

M. N. Mizerov, A. V. Sakharov, W. V. Lundin, 2016 .

Multi‐color monolithic III‐nitride light‐emitting diodes: Factors controlling emission spectra and efficiency

Wsevolod V. Lundin, A. E. Nikolaev, S. O. Usov, 2016 .

Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency

S. O. Usov, S. Karpov, A. Tsatsul'nikov, 2015 .

Realistic model of LED structure with InGaN quantum-dots active region

N. Cherkashin, M. Hytch, A. Pecchia, 2015, 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO).

Stimulated Formation of InGaN Quantum Dots

W. Lundin, A. F. Tsatsulnikov, 2012 .

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

S. O. Usov, M. N. Mizerov, M. Hytch, 2010 .

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

S. O. Usov, N. Cherkashin, M. Hytch, 2009 .

Lattice dynamics of short‐period AlN/GaN superlattices: Theory and experiment

A. N. Smirnov, V. Davydov, M. Smirnov, 2013 .

IR reflection of optical phonons in GaN/AlGaN superlattices

A. N. Smirnov, M. Ladanov, D. Zahn, 2004 .

X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

N. Cherkashin, V. Kaganer, M. Baidakova, 2014 .

Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

S. O. Usov, A. V. Sakharov, W. Lundin, 2010 .

A new approach to analysis of mosaic structure peculiarities of gallium nitride epilayers

V. V. Emtsev, A. Usikov, A. Titkov, 2001 .

Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam

S. O. Usov, A. Tsatsul'nikov, V. Evtikhiev, 2019, Semiconductors.

Influence of the carrier gas composition on metalorganic vapor phase epitaxy of gallium nitride

D. Sizov, W. Lundin, E. Zavarin, 2005 .

Heterostructure for UV LEDs Based on Thick AlGaN Layers

N. Ledentsov, A. Lunev, Y. Kudriavtsev, 1998 .

Stress‐dislocation management in MOVPE of GaN on SiC wafers

E. V. Yakovlev, A. V. Sakharov, A. F. Tsatsulnikov, 2016 .

Raman spectroscopy as a tool for characterization of strained hexagonal GaN/AlxGa1-xN superlattices

A. N. Smirnov, I. N. Goncharuk, S. Karpov, 2002 .

Correlation of mosaic-structure peculiarities with electric characteristics and surface multifractal parameters for GaN epitaxial layers

V. V. Emtsev, D. Poloskin, A. Usikov, 2001 .

Peculiarities of extended defect system in III-nitrides with different degrees of order of mosaic structure

A. Usikov, A. Titkov, E. Yakimov, 2003 .

Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

M. D. Moldavskaya, V. Shalygin, V. Korotyeyev, 2019, Journal of Applied Physics.

Time‐Resolved Studies of InGaN/GaN Quantum Dots

I. Krestnikov, N. Ledentsov, Yu. G. Musikhin, 2002 .

FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy

M. N. Mizerov, V. Evtikhiev, G. V. Voznyuk, 2018, Semiconductors (Woodbury, N.Y.).

Calculation of the Ga+ FIB Ion Dose Distribution by SEM Image

M. A. Kaliteevski, V. Evtikhiev, G. V. Voznyuk, 2020 .

Selective Epitaxy of Submicron GaN Structures

A. Tsatsul'nikov, A. Sakharov, V. Evtikhiev, 2019, Semiconductors.

Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source

P. Brunkov, A. Tsatsul'nikov, B. Ber, 2016 .

Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Ultraviolet photodetectors based on GaN and AlxGa1-xN epitaxial layers

N. B. Smirnov, A. V. Govorkov, E. E. Zavarin, 2000, Other Conferences.

InGaAlN heterostructures for LEDs grown on patterned sapphire substrates

A. Tsatsul'nikov, S. Troshkov, E. Lundina, 2008 .

Formation of textured sapphire substrates by self-arrangement process and wet etching for InGaAlN LEDs

A. Tsatsul'nikov, E. Lundina, A. V. Sakharov, 2008 .

Nonlinear imaging of whispering gallery modes in GaN microwires

N. Hendricks, R. Grange, Y. Berdnikov, 2021, Journal of Physics: Conference Series.

High growth rate MOVPE of Al(Ga)N in planetary reactor

P. Brunkov, B. Ber, W. Lundin, 2012 .

High growth rate of AlN in a planetary MOVPE reactor

P. Brunkov, A. Tsatsul'nikov, A. V. Sakharov, 2010 .

Effect of Annealing on Defects in As‐Grown and γ‐Ray Irradiated n‐GaN Layers

Igor L. Krestnikov, A. A. Lebedev, Andrei Osinsky, 1999 .

Comparative Study of InGaN/GaN Structures Grown by MOCVD Using Various Growth Sequences

A. Tsatsul'nikov, A. Sakharov, A. Usikov, 2001 .

Energy characteristics of excitons in InGaN/GaN heterostructures

N. N. Ledentsov, S. O. Usov, A. F. Tsatsul'nikov, 2008, SPIE Photonics Europe.

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer

A. V. Sakharov, A. F. Tsatsulnikov, D. Arteev, 2022, Materials.

X-ray determination of threading dislocation densities in GaN / Al 2 O 3 ( 0001 ) films grown by metalorganic vapor phase epitaxy

N. Cherkashin, V. Kaganer, M. Baidakova, 2014 .

Internal microstrain and distribution of composition and cathodoluminescence over lapped AlxGa1−xN epilayers on sapphire

A. Bobyl, A. Usikov, W. Lundin, 2000 .

Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

A. V. Sakharov, D. Arteev, W. Lundin, 2021 .

Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure

V. Chaldyshev, A. V. Sakharov, A. F. Tsatsulnikov, 2023, Applied Physics Letters.