S. L. Selvaraj

发表

Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate

T. Egawa, S. L. Selvaraj, A. Watanabe, 2011 .

The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs

G. Lo, Xing Zhou, Haifeng Sun, 2013, 2013 IEEE 5th International Nanoelectronics Conference (INEC).

Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN

T. Egawa, O. Oda, S. L. Selvaraj, 2013 .

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

A. Wakejima, T. Egawa, T. Egawa, 2012, IEEE Electron Device Letters.

Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

T. Egawa, T. Egawa, S. L. Selvaraj, 2011, IEEE Electron Device Letters.

High vertical breakdown strength in with low specific on‐resistance AlGaN/AlN/GaN HEMTs on silicon

G. Ng, T. Egawa, S. Arulkumaran, 2011 .

Improved Power Device Figure-of-Merit (4.0×108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

N. G. Ing, T. Egawa, S. Arulkumaran, 2011 .

Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal?Insulator?Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)

N. G. Ing, T. Egawa, S. Arulkumaran, 2009 .

Process Uniformity and Challenges of AlGaN/GaN MIS-HEMTs on 200-mm Si (111) Substrates Fabricated with CMOS-Compatible Process and Integration

G. Lo, A. Kamath, S. L. Selvaraj, 2015, Journal of Electronic Materials.

MOCVD grown normally-OFF type AlGaN/GaN HEMTs on 4 inch Si using p-InGaN cap layer with high breakdown

T. Egawa, S. L. Selvaraj, Kazuhiro Nagai, 2010, 68th Device Research Conference.

Effect of Carbon Doping and Crystalline Quality on the Vertical Breakdown Characteristics of GaN Layers Grown on 200-mm Silicon Substrates

G. Lo, S. Tripathy, T. Bhat, 2015, Journal of Electronic Materials.

Enhanced mobility for MOCVD grown AlGaN/GaN HEMTs on Si substrate

T. Egawa, S. L. Selvaraj, A. Watanabe, 2011, 69th Device Research Conference.

1.4 kV breakdown voltage for MOCVD grown AlGaN/GaN HEMTs on Si substrate

T. Egawa, A. Wakejima, S. L. Selvaraj, 2012, 70th Device Research Conference.

Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers

T. Egawa, S. L. Selvaraj, S. Tan, 2010 .

Dual-metal gate AlGaN/GaN high electron mobility transistors: A theoretical study

G. Lo, Haifeng Sun, S. L. Selvaraj, 2012, 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).

Heterogeneous Integration of GaN and BCD Technologies

Kiat Seng Yeo, Don Disney, Mei Yu Soh, 2019, Electronics.

Design and Characterization of Micro-LED Matrix Display With Heterogeneous Integration of GaN and BCD Technologies

Kiat Seng Yeo, T. Hui Teo, Don Disney, 2019, IEEE Transactions on Electron Devices.

Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si

T. Egawa, Josephine Selvaraj, S. L. Selvaraj, 2009 .

Raman Scattering and PL Studies on AlGaN/GaN HEMT Layers on 200 mm Si(111)

K. B. Lee, G. Lo, S. Todd, 2012 .

Tripathy Raman Scattering and PL Studies on AlGaN / GaN HEMT Layers on 200 mm Si ( 111 ) A

K. B. Lee, S. Tripathy, S. L. Selvaraj, 2012 .

AlN∕AlGaN∕GaN metal-insulator-semiconductor high-electron-mobility transistor on 4in. silicon substrate for high breakdown characteristics

T. Egawa, S. L. Selvaraj, Tsuneo Ito, 2007 .

Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

T. Egawa, T. Egawa, S. L. Selvaraj, 2009, IEEE Electron Device Letters.

Enhancement of drain current density by inserting 3nm Al layer in the gate of AlGaN∕GaN high-electron-mobility transistors on 4in. silicon

T. Egawa, S. L. Selvaraj, 2006 .

Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate

T. Egawa, Shuxin Tan, S. L. Selvaraj, 2009 .

Transmission Electron Microscopy to Study Gallium Nitride Transistors Grown on Sapphire and Silicon Substrates

T. Egawa, S. L. Selvaraj, 2012 .

MOCVD Grown AlGaN/GaN Transistors on Si Substrate for High Power Device Applications

T. Egawa, S. L. Selvaraj, 2012 .

Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

T. Egawa, S. L. Selvaraj, T. Kubo, 2011 .

Oxygen Plasma Treated Aluminum as a Gate Dielectric for AlGaN/GaN High Electron Mobility Transistors

T. Egawa, S. L. Selvaraj, 2009 .

AlN/AlGaN/GaN MIS-HEMTs with recessed source/drain Ohmic contact

T. Egawa, S. L. Selvaraj, Tsuneo Ito, 2008 .

Demonstration of AlGaN/GaN High Electron Mobility Transistors on a-Plane (1120) Sapphire

T. Egawa, S. L. Selvaraj, 2008 .

Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template

T. Egawa, Josephine Selvaraj, Mitsuhiro Tanaka, 2009 .

High power SiC inverter module packaging solutions for junction temperature over 220°C

Sorono Dexter Velez, Ho Siow Ling, Daniel Rhee Min Woo, 2014, 2014 IEEE 16th Electronics Packaging Technology Conference (EPTC).

Correlation between growth pits, optical and structural properties of AlGaN/GaN high-electron-mobility transistors on 4″ silicon substrate

T. Egawa, T. Jimbo, S. L. Selvaraj, 2010 .

Thin-Film Magnetic Inductors on Silicon for Integrated Power Converters

Don Disney, Ravinder Pal Singh, Lulu Peng, 2020, IECON 2020 The 46th Annual Conference of the IEEE Industrial Electronics Society.

On-Chip Thin Film Inductor for High Frequency DC-DC Power Conversion Applications

Chor Shu Cheng, D. Dinulovic, M. Shousha, 2020, 2020 IEEE Applied Power Electronics Conference and Exposition (APEC).