A. Watanabe

发表

Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate

T. Egawa, S. L. Selvaraj, A. Watanabe, 2011 .

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

T. Egawa, A. Watanabe, D. Christy, 2014 .

Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer

T. Egawa, A. Watanabe, B. Shuhaimi, 2010 .

Modeling of the wafer bow in GaN-on-Si epiwafers employing GaN/AlN multilayer buffer structures

T. Egawa, M. Miyoshi, A. Watanabe, 2016 .

Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer

T. Egawa, A. Wakejima, A. Ando, 2015 .

Recessed gate normally-OFF Al2O3/InAlN/GaN MOS-HEMT on silicon

T. Egawa, Tatsuya Ito, A. Watanabe, 2014 .

Enhancement-mode Al2O3/InAlN/GaN MOS-HEMT on Si with high drain current density 0.84 A/mm and threshold voltage of +1.9 V

T. Egawa, A. Watanabe, J. Freedsman, 2014, 72nd Device Research Conference.

Observation of reaction between a-type dislocations in GaN layer grown on 4-in. Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation

T. Egawa, Y. Sugawara, Y. Ishikawa, 2017 .

Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

T. Egawa, Y. Sugawara, Y. Ishikawa, 2016 .

Enhanced mobility for MOCVD grown AlGaN/GaN HEMTs on Si substrate

T. Egawa, S. L. Selvaraj, A. Watanabe, 2011, 69th Device Research Conference.

Influence of the barrier composition in GaN/InxAl1−xN quantum wells properties

T. Egawa, O. Oda, A. Watanabe, 2014 .

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

T. Egawa, A. Watanabe, J. Freedsman, 2015 .

Characterization of InAlN/GaN high-electron-mobility transistors grown on Si substrate using graded layer and strain-layer superlattice

T. Egawa, Tatsuya Ito, A. Watanabe, 2014 .

1.4 kV breakdown voltage for MOCVD grown AlGaN/GaN HEMTs on Si substrate

T. Egawa, A. Wakejima, S. L. Selvaraj, 2012, 70th Device Research Conference.

Defect Propagation from 3C-SiC to III-Nitride

T. Egawa, H. Fujimori, A. Watanabe, 2012 .

Defect Propagation from 3C-SiC Intermediate Layers to III–Nitride Epilayers

T. Egawa, H. Fujimori, A. Watanabe, 2012 .

Characterization of dislocations in GaN layer grown on 4-inch Si(111) with AlGaN/AlN strained layer superlattices

T. Egawa, Y. Sugawara, Y. Ishikawa, 2016 .

Low ohmic-contact resistance in recessed-gate normally-off AlGaN/GaN MIS-HEMT with δ-doped GaN Cap Layer

K. Inoue, T. Egawa, A. Wakejima, 2015, 2015 73rd Annual Device Research Conference (DRC).

Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

T. Egawa, A. Watanabe, J. Freedsman, 2015 .

Influence of AlN nucleation layer on vertical breakdown characteristics for GaN‐on‐Si

Yuya Yamaoka, Takashi Egawa, Joseph J. Freedsman, 2016 .

Role of 3C-SiC intermediate layers for III-nitride crystal growth on Si

T. Egawa, H. Fujimori, A. Watanabe, 2011 .

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

A. Wakejima, T. Egawa, T. Egawa, 2012, IEEE Electron Device Letters.