C. Dahl

A low-cost fully self-aligned SiGe BiCMOS technology using selective epitaxy and a lateral quasi-single-poly integration concept

J. Wiedemann, A. Tilke, M. Rochel, 2004, IEEE Transactions on Electron Devices.

Influence of Fluorinated Gate Oxides on the Low Frequency Noise of MOS Transistors under Analog Operation

R. Thewes, R. Brederlow, P. Klein, 1998, 28th European Solid-State Device Research Conference.

Explanation and quantitative model for the matching behaviour of poly-silicon resistors

R. Thewes, W. Weber, B. Holzapfl, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Visualizing the doping profile of a silicon germanium HBT with polysilicon emitter using electron holography

A. Lenk, H. Lichte, A. Tilke, 2005, IEEE Transactions on Electron Devices.

Integration of SiGe HBT with $\text{f}_{\text{T}}=305\ \text{GHz},\ \text{f}_{\max}=537 \text{GHz}$ in 130nm and 90nm CMOS

K. Aufinger, S. Boguth, D. Manger, 2018, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Low-frequency noise of integrated polysilicon resistors

Ralf Brederlow, Werner Weber, Roland Thewes, 2001 .

A physically based model for low-frequency noise of poly-silicon resistors

D. Schmitt-Landsiedel, W. Weber, R. Thewes, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

As-doped polysilicon emitters with interfacial oxides and correlation to bipolar device characteristics

A. Tilke, C. Wagner, C. Dahl, 2005 .

SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project

K. Aufinger, T. F. Meister, G. Fischer, 2015, 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.

Electron holography for visualisation of different doped areas in silicon-germanium heterojunction bipolar transistors

A. Lenk, H. Lichte, A. Tilke, 2005 .