Mingshan Liu

发表

Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm

J. Hartmann, J. Knoch, D. Grützmacher, 2020, IEEE Electron Device Letters.

Diameter Scaling of Vertical Ge Gate- All-Around Nanowire pMOSFETs

S. Trellenkamp, J. Hartmann, J. Knoch, 2020, IEEE Transactions on Electron Devices.

Performance improvement in novel germanium–tin/germanium heterojunction-enhanced p-channel tunneling field-effect transistor

Y. Hao, Xiao-hua Ma, G. Han, 2015 .

Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain

Y. Hao, G. Han, B. Cheng, 2015 .

Germanium-Tin P-channel tunneling field-effect transistors: Impacts of biaxial tensile strain and surface orientation

Y. Hao, G. Han, Chunfu Zhang, 2015, 2015 International Symposium on VLSI Technology, Systems and Applications.

Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-semiconductor field-effect transistor fabricated on (111)-oriented substrate

Y. Hao, G. Han, B. Cheng, 2014 .

First Demonstration of Vertical Ge0.92Sn0.08/Ge and Ge GAA Nanowire nMOSFETs with Low SS of 66 mV/dec and Small DIBL of 35 mV/V

J. Hartmann, J. Knoch, Qing-Tai Zhao, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Phase evolution of ultra-thin Ni silicide films on CF4 plasma immersion ion implanted Si

Qing-Tai Zhao, F. Torregrosa, Wenjie Yu, 2020, Nanotechnology.

Vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around nanowire pMOSFETs with NiGeSn contact

S. Trellenkamp, J. Hartmann, J. Knoch, 2020, Solid-State Electronics.

Vertical GeSn nanowire MOSFETs for CMOS beyond silicon

J. Hartmann, J. Knoch, D. Grützmacher, 2023, Communications Engineering.

Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications.

D. Grützmacher, Qing-Tai Zhao, A. Tiedemann, 2021, ACS Applied Materials and Interfaces.

Investigation of performance enhancement in InAs/InGaAs heterojunction-enhanced N-channel tunneling field-effect transistor

Y. Hao, Shengdong Hu, G. Han, 2015 .

Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effect Transistors with Enhanced Performance

J. Hartmann, J. Knoch, D. Grützmacher, 2020, ACS Applied Nano Materials.

Relaxed Ge0.97Sn0.03 P-channel tunneling FETs with high drive current fabricated on Si and further improvement enabled by uniaxial tensile strain

Y. Hao, G. Han, B. Cheng, 2015, 2015 International Symposium on VLSI Technology, Systems and Applications.

Design of GeSn-Based Heterojunction-Enhanced N-Channel Tunneling FET With Improved Subthreshold Swing and ON-State Current

Y. Hao, Shengdong Hu, G. Han, 2015, IEEE Transactions on Electron Devices.

GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing

Yue Hao, Chunfu Zhang, Yan Liu, 2016, IEEE Electron Device Letters.

Strained GeSn p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors With In Situ Si2H6 Surface Passivation: Impact of Sn Composition

Y. Hao, G. Han, B. Cheng, 2014, IEEE Transactions on Electron Devices.

Undoped Ge0.92Sn0.08 quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si2H6 passivation: High hole mobility and dependence of performance on orientation

Y. Hao, G. Han, B. Cheng, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Strained Ge0.96Sn0.04 P-channel MOSFETs with in situ low temperature Si2H6 surface passivation

Y. Hao, G. Han, B. Cheng, 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).