Z. Ji

发表

Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells.

Gang Wang, Xiangang Xu, Baoli Liu, 2012, Optics express.

Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths

Xiangang Xu, Mingsheng Xu, Hongdi Xiao, 2017, Scientific Reports.

Diameter-dependent photoluminescence properties of strong phase-separated dual-wavelength InGaN/GaN nanopillar LEDs

Xiangang Xu, Baoli Liu, Xue-Lin Wang, 2017 .

Porosity-induced relaxation of strains at different depth of nanoporous GaN studied using the Z-scan of Raman spectroscopy

Hongdi Xiao, Jishi Cui, Z. Ji, 2015 .

Photoluminescence of Nanoporous GaN Films Prepared by Electrochemical Etching

Xiangang Xu, Y. Lv, Zhihong Feng, 2014 .

Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures

Chengxin Wang, Xiangang Xu, Mingsheng Xu, 2021, Superlattices and Microstructures.

Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells

Q. Wang, Xiangang Xu, Y. Lv, 2016 .

Effect of deposition temperature on transparent conductive properties of γ‐CuI film prepared by vacuum thermal evaporation

Bingqiang Cao, Zhiwen Qiu, Juan Li, 2015 .

Controllable synthesis of rice-shape Alq 3 nanoparticles with single crystal structure

Feng Jiang, Z. Pang, Huimin Yuan, 2016 .

Annealing effect and photoluminescence properties in Tm+-implanted ZnO crystal

Jin-Hua Zhao, Ming Chen, Z. Ji, 2012 .

Tetramer bis‐(8‐hydroxyquinoline) Zinc Crystals Prepared by Physical Vapor Deposition Method

Z. Pang, Zhixian Wei, Shenghao Han, 2017 .

Structural properties of Alq3 nanocrystals prepared by physical vapor deposition and facile solution method

Feng Jiang, Z. Pang, Huimin Yuan, 2015 .

Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars

Xiangang Xu, Haifang Yang, Mingsheng Xu, 2018, Journal of Luminescence.

Fabrication of Non-Stoichiometric Titanium Dioxide by Spark Plasma Sintering and Its Thermoelectric Properties

L. Hao, H. Yoshida, Yun Lu, 2012 .

Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface

Qing-Tai Zhao, Xue-Lin Wang, Ming Chen, 2012 .

Type-I interband transition in undoped ZnSe/BeTe type-II quantum wells under high excitation density

K. Oto, H. Mino, Z. Ji, 2009 .

Spin dependent transitions of charged excitons in type-II quantum wells

S. Takeyama, R. Akimoto, H. Mino, 2004 .

Fullerene derivatives—Promising blue light absorbers suppressing visual hazards for efficient indoor light harvesters

Z. Ji, Hang Yin, Xiaotao Hao, 2022, Applied Physics Letters.

Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures

Xiangang Xu, Mingsheng Xu, Z. Ji, 2022, Micro and Nanostructures.

Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*

Xiangang Xu, Mingsheng Xu, Z. Ji, 2021, Chinese Physics B.

Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

Q. Guo, Lei Zhang, Xiangang Xu, 2015 .

Solid-Grinded Cocrystals of Acridine and 3,5-Dinitrobenzoic Acid: A Cocrystal with Strong Cocrystallization Ability and Two-Photon Excited Fluorescence Property

Chenxi Liu, Z. Pang, Z. Ji, 2022, The Journal of Physical Chemistry C.

"W-shaped" injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substrate.

Xiangang Xu, Mingsheng Xu, Jianfei Li, 2017, Optics express.

Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal–organic chemical vapor deposition

Haiyan Pei, Hongdi Xiao, Jianqiang Liu, 2013 .

Room temperature ferromagnetic and optical properties of rare earth Sm-doped tris(8-hydroxyquinoline) gallium thin films

Z. Pang, Zhixian Wei, Shenghao Han, 2018 .

Effect of substrate temperature on optical properties and strain distribution of ZnTe epilayer on (100) GaAs substrates

Q. Guo, Lei Zhang, Xiangang Xu, 2013 .

Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers

Hongdi Xiao, Jianqiang Liu, Jishi Cui, 2012 .

Light Control of Ferromagnetism in ZnO Films on Pt Substrate at Room Temperature

H. Qin, Jifan Hu, Bin Cheng, 2017, Scientific Reports.

Optical de Haas oscillations of charged excitons in type-II ZnSe/BeTe quantum wells

S. Takeyama, K. Oto, R. Akimoto, 2006 .

Electric- and magnetic-field effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells

S. Takeyama, K. Ōno, K. Oto, 2005 .

Green and blue emissions in phase-separated InGaN quantum wells

Zhihong Feng, Xiangang Xu, Yuanjie Lv, 2013 .

Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs

Xiangang Xu, Y. Lv, Zhihong Feng, 2015 .

Exciton valley dynamics probed by Kerr rotation in WSe2 monolayers

X. Marie, B. Urbaszek, T. Amand, 2014, 1407.5862.

Influence of injection current and temperature on electroluminescence in InGaN/GaN multiple quantum wells

Hao Wang, Xiangang Xu, Hongdi Xiao, 2014 .

Fabrication of p-ZnO:Na/n-ZnO:Na homojunction by surface pulsed laser irradiation

Qifeng Chen, Bingqiang Cao, Liqiang Zhang, 2017 .

Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN

Xiangang Xu, Z. Ji, Changfu Li, 2022, Journal of Luminescence.

Influence of interface structure in the active region on photoluminescence in InGaN/GaN quantum wells

Z. Ji, Rui Li, Kaiju Shi, 2023, Micro and Nanostructures.

Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction

Xiangang Xu, Mingsheng Xu, Z. Ji, 2020 .

Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate

Xiangang Xu, Mingsheng Xu, Jianfei Li, 2020, Scientific Reports.

Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths

Xiangang Xu, Mingsheng Xu, Hongdi Xiao, 2017, Scientific Reports.

Effect of InGaN growth interruption on photoluminescence properties of an InGaN-based multiple quantum well structure

Chengxin Wang, Xiangang Xu, Z. Ji, 2020 .

Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Xiangang Xu, Zhihong Feng, Yuanjie Lü, 2016 .

Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells

Xiangang Xu, Shuang Qu, Hongdi Xiao, 2013 .