H. Okagawa

发表

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Tsunemasa Taguchi, Munehiro Kato, Kazuyuki Tadatomo, 2001 .

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

Tsunemasa Taguchi, Yusuke Ueki, Kazuyuki Tadatomo, 2003 .

Temperature dependence of Stokes shift in InxGa1−xN epitaxial layers

T. Taguchi, H. Naito, Hiroyuki Tanaka, 2003 .

Spatially separated intrinsic emission components in In x Ga 1 − x N ternary alloys

T. Taguchi, E. Kobayashi, H. Okagawa, 2009 .

GaN quantum dot UV light emitting diode

P. Ramvall, Satoru Tanaka, Jeong-Sik Lee, 2003 .

Internal Quantum Efficiency and Nonradiative Recombination Rate in InGaN-Based Near-Ultraviolet Light-Emitting Diodes

H. Okagawa, H. Kudo, Y. Yamada, 2012 .

GaN Quantum Dot UV-LED-Fabrication and Optical Characteristics

P. Ramvall, Satoru Tanaka, Jeong-Sik Lee, 2004 .

Internal Quantum Efficiency of Nitride-based Light-Emitting Diodes

T. Taguchi, H. Okagawa, H. Kudo, 2008 .

A UV Light-Emitting Diode Incorporating GaN Quantum Dots

Hiroaki Okagawa, Peter Ramvall, Jeong-Sik Lee, 2003 .

Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

R. Zheng, T. Taguchi, K. Murakami, 2002 .

Selective Area Growth of GaN by MOVPE and HVPE

K. Hiramatsu, N. Sawaki, T. Shibata, 1997 .