H. Kudo

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

Tsunemasa Taguchi, Yusuke Ueki, Kazuyuki Tadatomo, 2003 .

Temperature dependence of Stokes shift in InxGa1−xN epitaxial layers

T. Taguchi, H. Naito, Hiroyuki Tanaka, 2003 .

Compound semiconductor lighting based on InGaN ultraviolet LED and ZnS phosphor system

T. Taguchi, K. Murakami, H. Kudo, 2000, 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).

Effects of electric field on photoluminescence spectra in InGaN ultraviolet light-emitting diodes

T. Taguchi, H. Kudo, Y. Yamada, 2000 .

Spatially separated intrinsic emission components in In x Ga 1 − x N ternary alloys

T. Taguchi, E. Kobayashi, H. Okagawa, 2009 .

Temperature-independent Stokes shift in an In0.08Ga0.92N epitaxial layer revealed by photoluminescence excitation spectroscopy

R. Zheng, T. Taguchi, K. Murakami, 2001 .

Ultraviolet emission properties in InxGa1−xN epitaxial layer revealed by magnetoluminescence and time-resolved luminescence studies

S. Nakamura, R. Zheng, T. Taguchi, 2000 .

Internal Quantum Efficiency and Nonradiative Recombination Rate in InGaN-Based Near-Ultraviolet Light-Emitting Diodes

H. Okagawa, H. Kudo, Y. Yamada, 2012 .

Internal Quantum Efficiency of Nitride-based Light-Emitting Diodes

T. Taguchi, H. Okagawa, H. Kudo, 2008 .

Blue radiative recombination due to hot electrons in InGaN single-quantum well LEDs

T. Taguchi, H. Kudo, Y. Yamada, 1998 .

Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

R. Zheng, T. Taguchi, K. Murakami, 2002 .