M. Zegaoui

发表

Theoretical and experimental study of a thermal damper based on a CNT/PCM composite structure for transient electronic cooling

Nathalie Rolland, Paul-Alain Rolland, Stéphane Lips, 2017 .

GaN Schottky diode on sapphire substrate for THz frequency multiplier applications

P. Mondal, G. Ducournau, Y. Roelens, 2021, Superlattices and Microstructures.

GaN-Based Laser Wireless Power Transfer System

Gaudenzio Meneghesso, Enrico Zanoni, Malek Zegaoui, 2018, Materials.

Micro-patterning of LiPON and lithium iron phosphate material deposited onto silicon nanopillars array for lithium ion solid state 3D micro-battery

N. Rolland, P. Rolland, P. Roussel, 2011 .

Single-channel 100 Gbit/s transmission using III–V UTC-PDs for future IEEE 802.15.3d wireless links in the 300 GHz band

Emilien Peytavit, Klaus M. Engenhardt, Guillaume Ducournau, 2018 .

100 Gbit/s THz Data Transmission and Beyond using Multicore Fiber Combined with UTC Photodiode Array

D. Gaillot, G. Bouwmans, G. Ducournau, 2022, 2022 Optical Fiber Communications Conference and Exhibition (OFC).

1.55-$\mu$ m GaNAsSb-Based Photoconductive Switch for Microwave Switching

Salim Faci, Satrio Wicaksono, Didier Decoster, 2010, IEEE Photonics Technology Letters.

The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs

F. Medjdoub, G. Pavlidis, S. Graham, 2019, IEEE Electron Device Letters.

1.55 μm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

J. Chazelas, S. Yoon, W. Loke, 2008 .

DC Performance of High-Quantum-Efficiency 1.3-$\mu \hbox{m}$ GaNAsSb/GaAs Waveguide Photodetector

S. Yoon, J. Chazelas, W. Loke, 2010, IEEE Electron Device Letters.

C-doped AlN/GaN HEMTs for High efficiency mmW applications

F. Medjdoub, E. Okada, M. Zegaoui, 2018, 2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC).

Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications

M. Germain, F. Medjdoub, J. Derluyn, 2018, 2018 13th European Microwave Integrated Circuits Conference (EuMIC).

Recent developments in amorphous sputterred ITO thin films acting as transparent front contact layer of CIGS solar cells for energy autonomous wireless microsystems

N. Rolland, P. Rolland, P. Roussel, 2011, 2011 37th IEEE Photovoltaic Specialists Conference.

GaAs metal–semiconductor–metal Schottky microwave optical switches

A. Aissat, D. Decoster, Z. Bensaad, 2013 .

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

F. Medjdoub, M. Zegaoui, E. Dogmus, 2018 .

Single channel l00 Gbit/s link in the 300 GHz band

X. Wallart, G. Ducournau, E. Peytavit, 2018, 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate

N. Rolland, P. Rolland, F. Medjdoub, 2011, IEEE Electron Device Letters.

High PAE high reliability AlN/GaN double heterostructure

M. Meneghini, G. Meneghesso, F. Medjdoub, 2015 .

Determination of carrier-induced optical index and loss variations in GaInAsP/InP heterostructures from static and dynamic Mach-Zehnder interferometer measurements

J. Chazelas, F. Mollot, J. Vilcot, 2004 .

High-Speed 1.3-$\mu\hbox{m}$ p-i-n GaNAsSb/GaAs Waveguide Photodetector

S. Yoon, J. Chazelas, W. Loke, 2010, IEEE Electron Device Letters.

Control of gallium incorporation in sol–gel derived CuIn(1−x)GaxS2 thin films for photovoltaic applications

N. Rolland, P. Roussel, C. Lethien, 2015 .

Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs∕GaAsSbN∕GaAs photodiode for 1.3μm application

J. Chazelas, S. Yoon, J. Vilcot, 2007 .

First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

D. Ducatteau, N. Rolland, M. Zegaoui, 2012, IEEE Electron Device Letters.

A 300-GHz Wireless Link Employing a Photonic Transmitter and an Active Electronic Receiver With a Transmission Bandwidth of 54 GHz

Malek Zegaoui, Ingmar Kallfass, Emilien Peytavit, 2020, IEEE Transactions on Terahertz Science and Technology.

High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate

D. Ducatteau, N. Rolland, M. Zegaoui, 2011, IEEE Electron Device Letters.

Hall-Effect Measurements of Sol–Gel Derived CuInS2 Thin Films for Photovoltaic Applications

N. Rolland, P. Rolland, P. Roussel, 2012 .

Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE

L. Largeau, J. Massies, F. Medjdoub, 2018 .

Evidence of optically induced degradation in gallium nitride optoelectronic devices

Gaudenzio Meneghesso, Enrico Zanoni, Malek Zegaoui, 2018, Applied Physics Express.

Above 600 mS/mm Transconductance with 2.3 A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon

Nathalie Rolland, Nicolas Waldhoff, Paul-Alain Rolland, 2011 .

High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure

F. Medjdoub, M. Tordjman, B. Grimbert, 2015 .

Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors

Nathalie Rolland, Paul-Alain Rolland, Malek Zegaoui, 2011 .

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

Nathalie Rolland, Paul-Alain Rolland, Malek Zegaoui, 2011 .

Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band

F. Medjdoub, E. Okada, M. Zegaoui, 2017, IEEE Microwave and Wireless Components Letters.

Optical devices for ultra-compact photonic integrated circuits based on III-V/polymer nanowires.

J. Vilcot, V. Magnin, J. Harari, 2007, Optics express.

GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV

F. Medjdoub, B. Grimbert, N. Herbecq, 2015 .

Low-loss InGaAsP/InP submicron optical waveguides fabricated by ICP etching

Jean-Pierre Vilcot, Didier Decoster, Malek Zegaoui, 2004 .

InAlGaN/GaN HEMTs at Cryogenic Temperatures

P. Ruterana, F. Medjdoub, M. Tordjman, 2016 .

High frequency high breakdown voltage GaN transistors

F. Medjdoub, N. Herbecq, M. Zegaoui, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

High power, high PAE Q‐band sub‐10 nm barrier thickness AlN/GaN HEMTs

F. Medjdoub, E. Okada, M. Zegaoui, 2017 .

High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

F. Medjdoub, M. Zegaoui, E. Dogmus, 2016 .

Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz

D. Ducatteau, F. Danneville, N. Rolland, 2012, IEEE Electron Device Letters.

Energy-Autonomous Picocell Remote Antenna Unit for Radio-Over-Fiber System Using the Multiservices Concept

Christophe Loyez, Nathalie Rolland, Paul-Alain Rolland, 2012, IEEE Photonics Technology Letters.