M. Morishima

发表

Silicon nitride anti-reflection coating on the glass and transparent conductive oxide interface for thin film solar cells and modules

T. Fujibayashi, R. Yang, T. Iwahashi, 2015 .

Segmented Electrode Plasma Source with Anti-Phase Discharge

I. Sawada, M. Morishima, Y. Saitoh, 2012 .

Limiting mechanism of molecular beam epitaxial growth of AlGaAs on (111) face

H. Horie, M. Morishima, T. Hayakawa, 1992 .

Molecular beam epitaxial growth of AlxGa1−xAs (x=0.2–0.7) on (111)B‐GaAs using As4 and As2

H. Horie, M. Morishima, T. Hayakawa, 1991 .

Segmented Electrode Plasma Source with Anti-Phase Discharge

I. Sawada, M. Morishima, Y. Saitoh, 2012 .

Surface reconstruction limited mechanism of molecular‐beam epitaxial growth of AlGaAs on (111)B face

Samuel Chen, M. Morishima, T. Hayakawa, 1991 .

Uniform MBE growth of 2 inch diameter wafer for GaAs/AlGaAs and InGaAs/AlGaAs quantum well lasers

H. Horie, M. Morishima, T. Hayakawa, 1993 .