F. Ferdousi

Parameter estimation of AR systems at a very low SNR using prefiltering in the autocorrelation domain

Mahmudur Khan, M. Sharmin, F. Ferdousi, 2003, TENCON 2003. Conference on Convergent Technologies for Asia-Pacific Region.

Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors

P. Hurley, R. Rios, K. Kuhn, 2013 .

Identification of AR parameters at a very low SNR using estimated spectral distribution in DCT domain

M. R. Khan, F. Ferdousi, M. Sharmin, 2006 .

Nonvolatile memory with Co–SiO2 core-shell nanocrystals as charge storage nodes in floating gate

S. Banerjee, D. Ferrer, Hai Liu, 2009 .

Protein-Assembled Nanocrystal-Based Vertical Flash Memory Devices with Al2O3 Integration

S. Banerjee, J. Sarkar, D. Shahrjerdi, 2009 .

Vertical Flash memory devices with Protein-assembled Nanocrystal floating gate and A12O3 control oxide

J. Sarkar, D. Shahrjerdi, E. Tutuc, 2008, Device Research Conference.

Vertical Flashmemorydevices withProtein-assembled Nanocrystal floating gate andA1203 control oxide

S. Banerjee, J. Sarkar, D. Shahrjerdi, 2008 .

Origin of shape anisotropy effects in solution-phase synthesized FePt nanomagnets

S. Banerjee, M. Doczy, G. Bourianoff, 2011 .

Effects of Si-cap thickness and temperature on device performance of Si/Ge1−xCx/Si p-MOSFETs

S. Banerjee, E. Tutuc, J. Donnelly, 2010 .

Capacitance and Conductance for an MOS System in Inversion, with Oxide Capacitance and Minority Carrier Lifetime Extractions

P. Hurley, R. Rios, K. Kuhn, 2014, IEEE Transactions on Electron Devices.