J. Jureńczyk

发表

Influence of a charge region on the operation of InGaAs/InAlAs/InP avalanche photodiodes

J. Kaniewski, J. Jureńczyk, D. Żak, 2013 .

Influence of Be doping placement in InAs/GaSb superlattice-based absorber on the performance of MWIR photodiodes

K. Czuba, A. Jasik, J. Kaniewski, 2017 .

Passivation studies of GaSb-based superlattice structures

J. Szade, A. Jasik, W. Rzodkiewicz, 2014 .

High operating temperature InAs/GaSb type-II superlattice detectors on GaAs substrate for the long wavelength infrared

Robert Rehm, Jasmin Niemasz, Lutz Kirste, 2019, Infrared Physics & Technology.

Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling

A. Rogalski, C. Wu, Yuh-Renn Wu, 2019, IEEE Electron Device Letters.

1/f Noise modeling of InAs/GaSb superlattice mid-wavelength infrared detectors

A. Kolek, K. Czuba, A. Jasik, 2017, 2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).

Zener Phenomena in InGaAs/InAlAs/InP Avalanche Photodiodes

J. Kaniewski, J. Jureńczyk, D. Żak, 2014 .

Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate

K. Grodecki, Piotr Martyniuk, Antoni Rogalski, 2018, Infrared Physics & Technology.

Modeling of InGaAs/InAlAs/InP avalanche photodiodes with undepleted absorber

Janusz Kaniewski, Jaroslaw Jurenczyk, Dariusz Zak, 2012, Other Conferences.

Electronic and optical properties of InAs/InAs0.625Sb0.375 superlattices and their application for far-infrared detectors

C. Autieri, G. Cuono, R. Islam, 2022, Journal of Physics D: Applied Physics.

Demonstration of T2SLs InAs/InAsSb Based Interband Cascade Detector Supported by Immersion Lens for LWIR

P. Martyniuk, J. Piotrowski, W. Gawron, 2023, Journal of Electronic Materials.

High operating temperature LWIR and VLWIR InAs1−xSbx optically immersed photodetectors grown on GaAs substrates

J. Piotrowski, D. Benyahia, Ł. Kubiszyn, 2019, Infrared Physics & Technology.