Hideki Makiyama

发表

A Silicon-on-Thin-Buried-Oxide CMOS Microcontroller with Embedded Atom-Switch ROM

Nobuyuki Sugii, Toshitsugu Sakamoto, Takumi Hasegawa, 2015, IEEE Micro.

Statistical Write Stability Characterization in SRAM Cells at Low Supply Voltage

Nobuyuki Sugii, Masaharu Kobayashi, Toshiro Hiramoto, 2016, IEEE Transactions on Electron Devices.

SOTB (Silicon on Thin Buried Oxide): More than Moore technology for IoT and Automotive

Takumi Hasegawa, Shiro Kamohara, Hideki Makiyama, 2017, 2017 IEEE International Conference on IC Design and Technology (ICICDT).

0.39-V, 18.26-µW/MHz SOTB CMOS Microcontroller with embedded atom switch ROM

Nobuyuki Sugii, Toshitsugu Sakamoto, Takumi Hasegawa, 2015, 2015 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS XVIII).

Ultralow-Power SOTB CMOS Technology Operating Down to 0.4 V

Nobuyuki Sugii, Koichiro Ishibashi, Toshiro Hiramoto, 2014 .

Statistical analysis of four write stability metrics in fully depleted silicon-on-thin-BOX (SOTB) and bulk SRAM cells at low supply voltage

Nobuyuki Sugii, Masaharu Kobayashi, Toshiro Hiramoto, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14µA sleep current using Reverse Body Bias Assisted 65nm SOTB CMOS technology

Hideharu Amano, Duc-Hung Le, Cong-Kha Pham, 2014, 2014 IEEE COOL Chips XVII.

Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime

Nobuyuki Sugii, Masaharu Kobayashi, Toshiro Hiramoto, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era

Hideharu Amano, Kazutoshi Kobayashi, Kimiyoshi Usami, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-BOX (SOTB) MOSFETs and Bulk MOSFETs

Nobuyuki Sugii, Toshiro Hiramoto, Hideki Makiyama, 2012 .

The Study of Plasma Induced Damage on 65-nm Silicon on Thin BOX Transistor

Tomohiro Yamashita, Keiichi Maekawa, Hideki Makiyama, 2019, IEEE Journal of the Electron Devices Society.

Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells

Nobuyuki Sugii, Hirofumi Shinohara, Toshiro Hiramoto, 2014 .

Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-Buried-Oxide and Bulk Metal-Oxide-Semiconductor Field Effect Transistors (Special Issue : Solid State Devices and Materials)

Hideki Makiyama, Yoshiki Yamamoto, Tomoko Mizutani, 2013 .

Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Tomohiro Yamashita, Keiichi Maekawa, Shiro Kamohara, 2018 .

Speed enhancement atVdd= 0.4 V and random τpdvariability reduction and analyisis of τpdvariability of silicon on thin buried oxide circuits

Nobuyuki Sugii, Koichiro Ishibashi, Hirofumi Shinohara, 2014 .

Detailed analysis of minimum operation voltage of extraordinarily unstable cells in fully depleted silicon-on-buried-oxide six-transistor static random access memory

Nobuyuki Sugii, Tomohiro Yamashita, Toshiro Hiramoto, 2015 .