Yannick Wimmer

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Tibor Grasser, Alexander L. Shluger, Wolfgang Gös, 2018, Microelectron. Reliab..

On the volatility of oxide defects: Activation, deactivation, and transformation

Tibor Grasser, Ben Kaczer, Alexander L. Shluger, 2015, 2015 IEEE International Reliability Physics Symposium.

Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs

Prateek Sharma, Karl Rupp, Tibor Grasser, 2015, Microelectron. Reliab..

Origins and implications of increased channel hot carrier variability in nFinFETs

Naoto Horiguchi, Aaron Thean, Philippe Roussel, 2015, 2015 IEEE International Reliability Physics Symposium.

A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETs

Tibor Grasser, Jacopo Franco, Ben Kaczer, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Predictive Hot-Carrier Modeling of n-Channel MOSFETs

Karl Rupp, Tibor Grasser, Jacopo Franco, 2014, IEEE Transactions on Electron Devices.

The role of cold carriers and the multiple-carrier process of Si–H bond dissociation for hot-carrier degradation in n- and p-channel LDMOS devices

Tibor Grasser, Prateek Sharma, Hajdin Ceric, 2016 .

Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation

Karl Rupp, Tibor Grasser, Prateek Sharma, 2015, IEEE Transactions on Electron Devices.