Markus Jech

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Tibor Grasser, Alexander L. Shluger, Wolfgang Gös, 2018, Microelectron. Reliab..

Physical modeling of the hysteresis in M0S2 transistors

Tibor Grasser, Thomas Muller, Gerhard Rzepa, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

A Compact Physics Analytical Model for Hot-Carrier Degradation

Dimitri Linten, Geert Hellings, Ben Kaczer, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Comphy - A compact-physics framework for unified modeling of BTI

A. Subirats, Dimitri Linten, Geert Hellings, 2018, Microelectron. Reliab..

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants

Dimitri Linten, Geert Hellings, Ben Kaczer, 2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC).

Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide

Tibor Grasser, Markus Jech, Diego Milardovich, 2021, ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).

Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface

Tibor Grasser, Markus Jech, Al-Moatasem El-Sayed, 2021, ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).

Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs

Tibor Grasser, Jacopo Franco, Ben Kaczer, 2016, IEEE Electron Device Letters.

Modeling of hot-carrier degradation in LDMOS devices using a drift-diffusion based approach

Karl Rupp, Tibor Grasser, Prateek Sharma, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).