Y. Jin

High performance tantalum carbide metal gate stacks for nMOSFET application

H.J. Lin, H.J. Tao, S.C. Chen, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Hole quantization and hole direct tunneling in deep submicron p-MOSFETs

M. F. Li, Y. Jin, Y. Hou, 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

Direct measurement of gate oxide damage from plasma nitridation process

M. Liang, V. Chang, T. Lee, 2003, 2003 8th International Symposium Plasma- and Process-Induced Damage..

High-Temperature Stable $\hbox{Ir}_{x}\hbox{Si}$ Gates With High Work Function on HfSiON p-MOSFETs

M. Liang, S. Chen, A. Chin, 2007, IEEE Transactions on Electron Devices.

HfSiON n-MOSFETs Using Low-Work Function$hboxHfSi_x$Gate

M. Liang, S. Chen, A. Chin, 2006, IEEE Electron Device Letters.

HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide

M. Liang, S. Chen, A. Chin, 2006, IEEE Electron Device Letters.

Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide

H.J. Tao, S.C. Chen, M. Liang, 2006, IEEE Electron Device Letters.

Direct determination of interface and bulk traps in stacked HfO/sub 2/ dielectrics using charge pumping method

M.S. Liang, S.C. Chen, L.G. Yao, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.