Peter James Carrington

发表

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb 2 and As 2 fluxes (Invited Paper)[6900-16]

Peter James Carrington, Va Solov ev, Qiandong Zhuang, 2008 .

Low Bandgap GaInAsSbP Pentanary Thermophotovoltaic cells

Peter James Carrington, Anthony Krier, K. J. Cheetham, 2010 .

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes-art. no. 690001

Peter James Carrington, Qiandong Zhuang, Anthony Krier, 2008 .

InSb-based quantum dot nanostructures for mid-infrared photonic devices

Andrew R. J. Marshall, Anthony Krier, Peter James Carrington, 2016, NanoScience + Engineering.

Mid-infrared diode lasers for free-space optical communications

Anthony Krier, Peter James Carrington, R. Jones, 2006, SPIE Security + Defence.

Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes

V. A. Solov'ev, Anthony Krier, Peter James Carrington, 2008 .

Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells

Johannes R. Botha, Anthony Krier, Peter James Carrington, 2013 .

Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

Johannes R. Botha, Anthony Krier, Peter James Carrington, 2012 .

Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

Robert J. Young, Anthony Krier, Peter James Carrington, 2013 .

Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

Johannes R. Botha, Anthony Krier, Peter James Carrington, 2014 .