Anthony Krier

发表

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb 2 and As 2 fluxes (Invited Paper)[6900-16]

Peter James Carrington, Va Solov ev, Qiandong Zhuang, 2008 .

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes-art. no. 690001

Peter James Carrington, Qiandong Zhuang, Anthony Krier, 2008 .

Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

Veronica Letka, Andrew R. J. Marshall, Anthony Krier, 2020, Optical Engineering + Applications.

Interface luminescence and lasing at a type II single broken-gap heterojunction

Maya P. Mikhailova, K. D. Moiseev, Yury P. Yakovlev, 2003, Saratov Fall Meeting.