J. Ni

发表

Thermal transportation simulation of a susceptor structure with ring groove for the vertical MOCVD reactor

Yue Hao, Shiliu Xu, Lin-An Yang, 2009 .

Improvement of breakdown and current collapse characteristics of GaN HEMT with a polarization-graded AlGaN buffer

Chuanhao Li, Y. Kong, J. Ni, 2015 .

Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1 1 1) substrates

J. Ni, Zhonghui Li, Weike Luo, 2018, Applied Surface Science.

Reduction in leakage current in AlGaN/GaN HEMT with three Al-containing step-graded AlGaN buffer layers on silicon

Zhou Jianjun, Jianjun Zhou, Xinxin Yu, 2014 .

AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm-Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V

Tangsheng Chen, Jianjun Zhou, Xinxin Yu, 2014 .

Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT

Y. Hao, Q. Feng, Jincheng Zhang, 2008 .

Study of GaN MOS-HEMT using ultrathin Al2O3 dielectric grown by atomic layer deposition

Y. Hao, Xiao-hua Ma, Q. Feng, 2009 .

Polarity results in different etch pit shapes of screw and edge dislocations in GaN epilayers

Y. Hao, Zhiyuan Gao, Jincheng Zhang, 2007, 2007 International Workshop on Electron Devices and Semiconductor Technology (EDST).

Structure and Strain Properties of GaN Films Grown on Si (111) Substrates with Al x Ga 1 −x N/Al y Ga 1 −y N Superlattices

Tangsheng Chen, Chuanhao Li, Xinxin Yu, 2015 .

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

Wei Mao, Yue Hao, Qian Feng, 2008, IEEE Electron Device Letters.

Effect of high temperature AlN interlayer on the performance of AlGaN/GaN properties

Y. Hao, Jincheng Zhang, J. Ni, 2009, 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).

Improved electrical properties of the two-dimensional electron gas in AlGaN/GaN heterostructures using high temperature AlN interlayers

Y. Hao, Jincheng Zhang, J. Ni, 2010 .

Growth of compressively-strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers

Chuanhao Li, J. Ni, Zhonghui Li, 2016 .

2DEG Transport Properties in AlGaN/GaN Double Heterostructure HEMT with High In Composition InGaN Channel

Dong Zhang, J. Ni, Daqing Peng, 2013 .

Influence of SiH4 treatment time on the properties of GaN films grown on in-situ SiNx patterned sapphire substrate

L. Li, Chuanhao Li, J. Ni, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).