S. Onda

发表

Ultrahigh-quality silicon carbide single crystals

Tadashi Ito, Daisuke Nakamura, Kazumasa Takatori, 2004, Nature.

First principles investigation of SiC/AlGaN(0001) band offset

K. Shiraishi, M. Araidai, S. Onda, 2017 .

Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density

Takeshi Endo, Kimimori Hamada, Toyokazu Ohnishi, 2011 .

Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000 1 ¯ ), and (1 1 ¯ 00) surfaces

K. Shiraishi, Y. Kangawa, S. Onda, 2019, Japanese Journal of Applied Physics.

GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy with high-speed wafer rotation

S. Onda, K. Hara, Y. Hoshino, 2019, Japanese Journal of Applied Physics.

Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis

H. Tsuboi, H. Takaba, A. Miyamoto, 2008 .

Development of RAF Quality 150mm 4H-SiC Wafer

T. Kozawa, T. Masuda, S. Yamauchi, 2014 .

Threading dislocation with b=c+2a in 4H-SiC as determined by LACBED

H. Saka, Hiroyuki Kondo, S. Onda, 2015 .

Inclination of a threading dislocation in an epilayer of 4H-SiC

H. Saka, Hiroyuki Kondo, S. Onda, 2014 .

The dissociation modes of threading screw dislocations in 4H-SiC

K. Shiraishi, H. Saka, Hiroyuki Kondo, 2013 .

Nondestructive visualization of threading dislocations in GaN by micro raman mapping

M. Shimizu, M. Tagawa, S. Harada, 2019, Japanese Journal of Applied Physics.

Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer

M. Tagawa, S. Harada, T. Ujihara, 2020, physica status solidi (b).

Mechanism of nitrogen incorporation in sublimation growth of SiC

M. Naitoh, S. Onda, K. Hara, 2002 .

Detection of edge component of threading dislocations in GaN by Raman spectroscopy

M. Shimizu, M. Tagawa, S. Harada, 2018 .

Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping

M. Tajima, M. Naitoh, S. Onda, 2008 .

4H-SiC Bulk Growth Using High-Temperature Gas Source Method

H. Tsuchida, J. Kojima, S. Onda, 2014 .

High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing

T. Endo, S. Onda, E. Okuno, 2008 .

Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes

Tsuyoshi Ishikawa, Kimimori Hamada, Hideki Naruoka, 2012 .

Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping

M. Shimizu, M. Tagawa, S. Harada, 2018, Applied Physics Express.

Computational Evaluation of Electrical Conductivity on SiC and the Influence of Crystal Defects

C. Del Carpio, M. Koyama, H. Tsuboi, 2008 .

SiC Integrated MOSFETs

R. Kumar, K. Hara, S. Onda, 1997 .

Correlation of Stress in Silicon Carbide Crystal and Frequency Shift in Micro-Raman Spectroscopy

T. Masuda, S. Onda, Naohiro Sugiyama, 2014 .

Effect of Hydrogenation on the Dangling-Bond Free 4H-SiC(1120)/SiO2 Interface Studied by Ab Initio Calculations

M. Itoh, T. Uda, S. Onda, 2009 .

Ab initiotheoretical study of an oxygen vacancy defect at the4H-SiC(0001)/SiO2interface

M. Itoh, T. Uda, S. Onda, 2009 .

First Principles Theoretical Study of 4H-SiC/SiO2 Interfacial Electronic States on (0001), (0001), and (1120)

M. Itoh, T. Uda, S. Onda, 2008 .

Analysis of dislocation line tilt in GaN single crystal by Raman spectroscopy

M. Shimizu, M. Tagawa, S. Harada, 2020, Japanese Journal of Applied Physics.

Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide

Masanori Nagaya, Kensaku Yamamoto, Eiichi Okuno, 2012 .

Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H–SiC MOSFET

Kenji Shiraishi, Norikazu Hosokawa, Yoshiyuki Hisada, 2013 .

SiC HTCVD Simulation Modified by Sublimation Etching

S. Onda, M. Nagakubo, K. Ikeda, 2006 .

Ultrahigh-Quality Silicon Carbide Single Crystals.

S. Yamaguchi, K. Takatori, A. Okamoto, 2004 .

TSD Reduction by RAF (Repeated a-Face) Growth Method

Fusao Hirose, Yasushi Urakami, S. Yamaguchi, 2012 .

(11-20) Face Channel MOSFET with Low On-Resistance

T. Endo, J. Kawai, S. Onda, 2008 .

Self-Healing Phenomenon of Micropipes in Silicon Carbide

T. Tani, N. Kamiya, A. Okamoto, 2002 .

Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide

T. Masuda, S. Onda, K. Shigetoh, 2014 .