Jun‐Hyun Park

发表

Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors

Dong Myong Kim, Dae Hwan Kim, Chang Jung Kim, 2010 .

P‐203L: Late‐News Poster: Analytical I‐V and C‐V Models for Amorphous InGaZnO TFTs and Their Application to Circuit Simulations

Changjung Kim, Y. Jeon, Je‐hun Lee, 2011 .

Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)

U-In Chung, Dong Myong Kim, Dae Hwan Kim, 2010, IEEE Transactions on Electron Devices.

P‐205L: Late‐News Poster: Comparison between a‐InGaZnO and a‐InHfZnO TFTs in Perspective of Subgap Density of States (DOS) in Active Film

Y. Jeon, Je‐hun Lee, Sangwon Lee, 2010 .

P‐202L: Late‐News Poster: Density‐of‐States Based Analysis on the Effect of Active Thin‐film Thickness on Current Stress‐induced Instability in Amorphous InGaZnO AMOLED Driver TFTs

Y. Jeon, Je‐hun Lee, D. M. Kim, 2011 .

Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress

J. Hur, C. J. Kim, Young-soo Park, 2009 .

Relation Between Low-Frequency Noise and Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors

Y. Jeon, Je‐hun Lee, Jae-Woo Park, 2010, IEEE Electron Device Letters.

Extraction of Density of States in Amorphous GaInZnO Thin-Film Transistors by Combining an Optical Charge Pumping and Capacitance–Voltage Characteristics

Dong Myong Kim, Dae Hwan Kim, Chang Jung Kim, 2008, IEEE Electron Device Letters.

Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

Dong Myong Kim, Changjung Kim, Young-soo Park, 2008 .

Improvement of threshold voltage shift distribution characteristic in double layer NiSi2 nanocrystals for nano-floating gate memory applications

Seung-Beck Lee, Jun‐Hyun Park, Sung-jin Choi, 2010, 10th IEEE International Conference on Nanotechnology.

Comparative Study on Program/Erase Efficiency and Retention Properties of 3-D SONOS Flash Memory Cell Array Transistors: Structural Approach from Double-Gate FET and FinFET to Gate-All-Around FET

Jieun Lee, D. M. Kim, D. Kim, 2009 .

Surface-Potential-Based Analytic DC $I$ –$V$ Model With Effective Electron Density for $a$-IGZO TFTs Considering the Parasitic Resistance

D. M. Kim, D. Kim, H. Bae, 2011, IEEE Electron Device Letters.

Self-Consistent Technique for Extracting Density of States in Amorphous InGaZnO Thin Film Transistors

C. J. Kim, Young-soo Park, D. M. Kim, 2010 .

Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics

Dong Myong Kim, Sungwook Park, Dae Hwan Kim, 2010, IEEE Electron Device Letters.

Impact of Oxygen Flow Rate on the Instability Under Positive Bias Stresses in DC-Sputtered Amorphous InGaZnO Thin-Film Transistors

Y. Jeon, Je‐hun Lee, H. Kwon, 2012, IEEE Electron Device Letters.

Density of States-Based DC $I$– $V$ Model of Amorphous Gallium–Indium–Zinc-Oxide Thin-Film Transistors

Dong Myong Kim, Dae Hwan Kim, Chang Jung Kim, 2009, IEEE Electron Device Letters.

Empirical Modeling and Extraction of Parasitic Resistance in Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors

Dong Myong Kim, Dae Hwan Kim, Jun-Hyun Park, 2011, IEEE Transactions on Electron Devices.