H. Murray

Conduction mechanisms in 2D and 3D SIS capacitors

B. Domengès, F. Voiron, S. Jacqueline, 2013 .

A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations

Patrick M. Martin, H. Murray, S. Koumetz, 2014 .

Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)

D. Chateigner, U. Lüders, F. Lallemand, 2021 .

Analytic description, measurements, and modeling of 3D-embedded silicon inductance for High-Performance Hybrid Systems Applications

Philippe Descamps, Daniel Pasquet, Olivier Tesson, 2013, International Journal of Microwave and Wireless Technologies.

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

U. Lüders, F. Lallemand, C. Bunel, 2020, Beilstein journal of nanotechnology.

Analytic resolution of Poisson–Boltzmann equation in nanometric semiconductor junctions

H. Murray, 2009 .