P.V. Schwartz

The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

J. Sturm, E. Prinz, P. Garone, 1991, IEEE Electron Device Letters.

Fabry-Perot optical intensity modulator at 1.3 mu m in silicon

J.C. Sturm, X. Xiao, P.V. Schwartz, 1991, IEEE Photonics Technology Letters.