J. Ramos

Experimental evidence of short-channel electron mobility degradation caused by interface charges located at the gate-edge of triple-gate FinFETs

M. Rosmeulen, M. Jurczak, A. Mercha, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

A comprehensive model to accurately calculate the gate capacitance and the leakage from DC to 100 MHz for ultra thin dielectrics

W. Sansen, L. Pantisano, G. Groeseneken, 2006, 2006 IEEE International Conference on Microelectronic Test Structures.

Accurate Gate Impedance Determination on Ultraleaky MOSFETs by Fitting to a Three-Lumped-Parameter Model atFrequencies From DC to RF

B. O’Sullivan, G. Groeseneken, M. Toledano-Luque, 2007, IEEE Transactions on Electron Devices.

Impact of Cu contacts on front-end performance: a projection towards 22nm node

M. Van Hove, T. Chiarella, G. Van den bosch, 2006, 2006 International Interconnect Technology Conference.

Diffusion-less junctions and super halo profiles for PMOS transistors formed by SPER and FUSI gate in 45 nm physical gate length devices

A. Veloso, M. Jurczak, A. Lauwers, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS

P. Wambacq, A. Mercha, S. Decoutere, 2004, IEEE Journal of Solid-State Circuits.

Ni-based FUSI gates: CMOS Integration for 45nm node and beyond

H. Tigelaar, T. Chiarella, J. Ramos, 2006, 2006 International Electron Devices Meeting.