Soonyoung Lee

Comparative study of MC-50 and ANITA neutron beams by using 55 nm SRAM

Sanghyeon Baeg, Soonyoung Lee, S. Baeg, 2012 .

SEIFF: Soft Error Immune Flip-Flop for Mitigating Single Event Upset and Single Event Transient in 10 nm FinFET

Seungbae Lee, Taiki Uemura, Soonyoung Lee, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation

Sanghyeon Baeg, Soonyoung Lee, Saqib A. Khan, 2017, Microelectron. Reliab..

Technology Scaling Trend of Soft Error Rate in Flip-Flops in $1\times$ nm Bulk FinFET Technology

Taiki Uemura, Soonyoung Lee, Sangwoo Pae, 2018, IEEE Transactions on Nuclear Science.

Novel Error Detection Scheme With the Harmonious Use of Parity Codes, Well-Taps, and Interleaving Distance

Sanghyeon Baeg, Sang Hoon Jeon, Soonyoung Lee, 2014, IEEE Transactions on Nuclear Science.

Enhanced Reliability of 7-nm Process Technology Featuring EUV

S. Pae, Wonchang Kang, H. Shim, 2019, IEEE Transactions on Electron Devices.

Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance

Taiki Uemura, Soonyoung Lee, Sangwoo Pae, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Investigation of alpha-induced single event transient (SET) in 10 nm FinFET logic circuit

Seungbae Lee, Taiki Uemura, Soonyoung Lee, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Study of Neutron Soft Error Rate (SER) Sensitivity: Investigation of Upset Mechanisms by Comparative Simulation of FinFET and Planar MOSFET SRAMs

Dan Alexandrescu, Soonyoung Lee, Issam Nofal, 2015, IEEE Transactions on Nuclear Science.