Bin Wang

发表

The collision frequency model of the solid state plasma for Si/Si 1−x Ge x /Si SPiN device

Huiyong Hu, Haiyan Kang, H. Zhang, 2017 .

Physically-based modeling for hole scattering rate in strained Si1−xGex/(100)Si

Yuming Zhang, Huiyong Hu, H. Zhang, 2015 .

Longitudinal, transverse, density-of-states, and conductivity masses of electrons in (001), (101) and (111) biaxially-strained-Si and strained-Si1−xGex

Huiyong Hu, H. Zhang, Chunyu Zhou, 2012 .

High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-Temperature Magnetron Sputtering for Optoelectronic Application

Linpeng Dong, Huiyong Hu, H. Zhang, 2019, Materials.

A comparative study on performance of junctionless Bulk SiGe and Si FinFET

Y. Wang, Huiyong Hu, Lingyao Meng, 2022, Microelectronics Journal.

Growth and Magnetism of MnxGe1−x Heteroepitaxial Quantum Dots Grown on Si Wafer by Molecular Beam Epitaxy

Huiyong Hu, Lingyao Meng, Liming Wang, 2020, Crystals.

INVESTIGATION OF SURFACE PIN DIODES FOR A NOVEL RECONFIGURABLE ANTENNA

Yu Wang, Huiyong Hu, Haiyan Kang, 2019, Progress In Electromagnetics Research Letters.

Amorphous cobalt-iron decorated carbon paper with nanosheet structure for enhanced oxygen evolution reaction

Zhuangzhuang Liu, Qianqian Jiang, Bin Wang, 2021, Advanced Powder Technology.

Single-crystalline GePb alloys formed by rapid thermal annealing-induced epitaxy

Huiyong Hu, Yuanhao Miao, Jiayin Yang, 2020, Journal of Physics D: Applied Physics.

High-performance infrared Ge-based plasmonic photodetector enhanced by dual absorption mechanism

Huiyong Hu, Lingyao Meng, Yichi Zhang, 2020 .