J. Alderman

Low-temperature electron mobility in Trigate SOI MOSFETs

G. Knoblinger, C.R. Cleavelin, P. Patruno, 2006, IEEE Electron Device Letters.

Quantum-mechanical effects in trigate SOI MOSFETs

C.R. Cleavelin, J.-P. Colinge, J. Colinge, 2006, IEEE Transactions on Electron Devices.

Activation of Nbti Degradation in Soi Pmos by Self-Heating

M. Uren, W. Eccleston, R. Bunyan, 1992, 1992 IEEE International SOI Conference.

Electrical and Thermal Feedback Effects on the Small-Signal Drain Characteristics of Partially-Depleted Soi Mosfets

R. Howes, W. Redman-White, R.J.T. Bunyan, 1992, 1992 IEEE International SOI Conference.

Formation of buried insulating layers in silicon by the implantation of high doses of oxygen

D. Ioannou, P. Hemment, J. Alderman, 1983 .

Interpretation of capacitance-voltage characteristics on silicon-on-insulator (SOI) capacitors

John Alderman, William Eccleston, L. J. McDaid, 1989 .

Temperature effects on trigate SOI MOSFETs

G. Knoblinger, C.R. Cleavelin, P. Patruno, 2006, IEEE Electron Device Letters.

Defect passivation and dark count in Geiger-mode avalanche photodiodes

Alan Mathewson, John Alderman, Alan P. Morrison, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Temperature dependence of threshold voltage in thin-film SOI MOSFETs

G. Groeseneken, J.-P. Colinge, J. Colinge, 1990, IEEE Electron Device Letters.

Monitoring the temperature rise in SOI transistors by measurement of leakage current

W. Eccleston, S. Hall, W. Eccleston, 1991, 1991 IEEE International SOI Conference Proceedings.

Physical origin of negative differential resistance in SOI transistors

Steve Hall, William Eccleston, L. J. McDaid, 1989 .