R. Held

发表

Semiconductor quantum point contact fabricated by lithography with an atomic force microscope

Martin Holland, Klaus Ensslin, Thomas Heinzel, 1997 .

In-plane Gate Single Electron Transistor Fabricated by AFM Lithography

K. Ensslin, Andreas Fuhrer, W. Wegscheider, 2000 .

In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

K. Ensslin, Andreas Fuhrer, W. Wegscheider, 1999, cond-mat/9909340.

Fabricating tunable semiconductor devices with an atomic force microscope

K. Ensslin, W. Wegscheider, T. Heinzel, 1999 .

A rate equation model for the growth of GaN on GaN(0001̄) by molecular beam epitaxy

P. Cohen, B. Ishaug, A. Dabiran, 2000 .

Structure and composition of GaN(0001) A and B surfaces

P. Cohen, S. Seutter, B. Ishaug, 1999 .

In situ control of gan growth by molecular beam epitaxy

A. M. Johnston, P. Cohen, A. Dabiran, 1997 .

Quantum wires and quantum dots defined by lithography with an atomic force microscope

K. Ensslin, Andreas Fuhrer, W. Wegscheider, 2002 .

Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation

K. Ensslin, W. Wegscheider, M. Bichler, 2001 .

Electronic properties of AFM-defined semiconductor nanostructures: quantum wires and single electron transistors

K. Ensslin, W. Wegscheider, M. Bichler, 2001 .

Nanolithography on semiconductor heterostructures by local oxidation with an atomic force microscope

K. Ensslin, T. Vancura, W. Wegscheider, 1999 .

Analysis of the temperature-dependent quantum point contact conductance in relation to the metal-insulator transition in two dimensions

T. Ihn, K. Ensslin, W. Wegscheider, 2000, cond-mat/0012205.

In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope

Werner Wegscheider, Martin Holland, Klaus Ensslin, 1998 .

Scanning gate measurements on a quantum wire

T. Ihn, K. Ensslin, W. Wegscheider, 2002 .

In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

K. Ensslin, Andreas Fuhrer, W. Wegscheider, 1999, cond-mat/9909340.

Shifting a Quantum Wire through a Disordered Crystal: Observation of Conductance Fluctuations in Real Space

K. Ensslin, W. Wegscheider, G. Salis, 1999, cond-mat/9909337.

N-Limited Versus Ga-Limited Growth on${\rm GaN}(000\bar{1})$by MBE UsingNH3

A. M. Johnston, P. Cohen, A. Dabiran, 1998 .

Growth rate reduction of GaN due to Ga surface accumulation

A. M. Johnston, P. Cohen, A. Dabiran, 1996 .