N. Futakuchi

Reduction of second- and third-order harmonic distortion by nonlinear absorption in gain-coupled distributed-feedback laser diodes

Y. Nakano, N. Futakuchi, T. Taguchi, 1999 .

28-ps switching window with a selective area MOVPE all-optical MZI switch

N. Futakuchi, Y. Nakano, Y. Nakano, 2005, IEEE Photonics Technology Letters.

Fabrication and characterization of SOA and phase shifter integrated interferometer all-optical switches by single-step GaInAsP/InP selective area MOVPE

Y. Nakano, N. Futakuchi, X. Song, 2003, International Conference onIndium Phosphide and Related Materials, 2003..

Selective oxidation for enhancement of magneto-optic effect in optical isolator with semiconductor guiding layer

Y. Nakano, T. Mizumoto, H. Yokoi, 2001 .

Waveguide-type PnpN optical thyristor operating at 1.55 μm

Y. Nakano, S. Lee, N. Futakuchi, 2000, IEEE Photonics Technology Letters.

Fabrication of InGaAsP/InP Mach-Zehnder interferometer optical amplifier switches by metalorganic vapor phase selective area epitaxy

Y. Nakano, N. Futakuchi, X. Song, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Optical isolator using a nonreciprocal phase shift with a semiconductor guiding layer

Y. Nakano, T. Mizumoto, H. Yokoi, 2000, LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080).

Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches by Selective Area MOVPE

Yoshiaki Nakano, Daisuke Miyashita, Xueliang Song, 2006, IEICE Trans. Electron..

X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes

Y. Shimogaki, Y. Nakano, M. Tabuchi, 2000 .

Demonstration of an Optical Isolator with a Semiconductor Guiding Layer that was Obtained by Use of a Nonreciprocal Phase Shift.

T Mizumoto, Y. Nakano, T. Mizumoto, 2000, Applied optics.

Feasibility of integrated optical isolator with semiconductor guiding layer fabricated by wafer direct bonding

Yoshiaki Nakano, Tetsuya Mizumoto, Hideki Yokoi, 1999 .

Optical characteristics of PnpN optical thyristor operating at 1.55 μm

Sang Bae Lee, S. H. Kim, Y. Nakano, 2003 .